Abstract
A four-level model of photoluminescence from Si nanocrystal arrays embedded in a SiO2 matrix is suggested. The model allows for thermally activated transitions between singlet and triplet levels in the exchange-split energy state of an exciton in an excited silicon nanocrystal. An expression is derived for the temperature dependence of the intensity of photoluminescence monochromatic components. A correlation is found between the amount of splitting and the emitted photon energy by comparing model data with our experimental data for ion-synthesized Si nanocrystals in a SiO2 matrix. The model explains the finiteness of the photoluminescence intensity at temperatures close to 0 K and the nonmonotonicity of the temperature run of the intensity.
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Original Russian Text © S.N. Nagornykh, V.I. Pavlenkov, A.N. Mikhailov, A.I. Belov, L.V. Krasil’nikova, D.I. Kryzhkov, D.I. Tetel’baum, 2012, published in Zhurnal Tekhnicheskoi Fiziki, 2012, Vol. 82, No. 12, pp. 63–66.
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Nagornykh, S.N., Pavlenkov, V.I., Mikhailov, A.N. et al. Model of photoluminescence from ion-synthesized silicon nanocrystal arrays embedded in a silicon dioxide matrix. Tech. Phys. 57, 1672–1675 (2012). https://doi.org/10.1134/S1063784212120213
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DOI: https://doi.org/10.1134/S1063784212120213