Abstract
It is found that the conversion of time-variable photoresponse I(t) from a crystal to signature I(t) − dI/dt of the phase plane makes it possible to determine partial contributions from the constituents of the photoresponse and their interrelation. In addition, such a procedure allows one to introduce the integrative indices of stability (B din) and asymmetry (K λ, E ) of the photoresponse’s structure, which reflect the influence of external and internal factors, respectively.
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Original Russian Text © A.V. But, V.P. Migal’, A.S. Fomin, 2012, published in Zhurnal Tekhnicheskoi Fiziki, 2012, Vol. 82, No. 4, pp. 156–160.
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But, A.V., Migal’, V.P. & Fomin, A.S. Structure of a time-variable photoresponse from semiconductor sensors. Tech. Phys. 57, 575–577 (2012). https://doi.org/10.1134/S1063784212040044
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DOI: https://doi.org/10.1134/S1063784212040044