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Formation and investigation of cobalt silicide ultrathin layers in Ti/Co/Ti-, TiN/Ti/Co-, and TiN/Co-on-silicon structures

Abstract

The formation of ultrathin CoSi2 layers in Ti(8 nm)/Co(10 nm)/Ti(5 nm), TiN(18 nm)/Ti(2 nm)/Co(8 nm), and TiN(18 nm)/Co(8 nm) systems magnetron-sputtered on the Si(100) surface is studied. The systems are subjected to two-step rapid thermal annealing. In between the annealing steps, the “sacrificial” layer is chemically removed and the second and third systems are additionally covered by a 17-nm-thick amorphous silicon (α-Si) layer. In the course of the fabrication process, the structures are examined using time-of-flight secondary-ion (cation) mass spectrometry, Auger electron spectroscopy, and scanning electron microscopy combined with X-ray energy dispersion microanalysis. It is shown that the above complex of analytical investigation provides efficient physical control of ultrathin silicide layer formation.

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References

  1. 1.

    F. Wacquant, C. Regnier, M.-T. Basco, and C. Julien, in Proceedings of the International Symposium on Advanced Short-Time Thermal Processing for Si-Based CMOS Devices, Palais, 2003, Ed. by F. Roozeboom, et al. (The Electrochem. Soc.), pp. 191–196.

  2. 2.

    Bei Li and Jianlin Liu, J. Appl. Phys. 105, 084905 (2009).

    ADS  Article  Google Scholar 

  3. 3.

    S. P. Murarka, Silicides for VLSI: Applications (Academic, New York-London, 1983; Mir, Moscow, 1986).

    Google Scholar 

  4. 4.

    R. A. Donaton, K. Maex, A. Vantomme, et al., Appl. Phys. Lett. 70, 1266 (1997).

    ADS  Article  Google Scholar 

  5. 5.

    I. V. Belousov, G. V. Kuznetsov, and O. P. Pchelyakov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 40, 909 (2006) [Semiconductors 40, 881 (2006)].

    Google Scholar 

  6. 6.

    C. Detavernier, C. Lavoie, and R. L. van Meirhaeghe, Thin Solid Films 468, 174 (2004).

    ADS  Article  Google Scholar 

  7. 7.

    V. I. Rudakov and V. N. Gusev, Mikroelektronika 37, 245 (2008).

    Google Scholar 

  8. 8.

    US Patent No. 6410429 (March 1, 2001).

  9. 9.

    M. Vulpio, D. Fazio, M. Bileci, et al., in Proceedings of the 204th Electrochem. Soc. Meeting, Orlando, 2003, Abstract 594.

  10. 10.

    Y. Gao, J. Appl. Phys. 64, 3760 (1988).

    ADS  Article  Google Scholar 

  11. 11.

    C. W. Magee, W. L. Harrington, and E. M. Botnick, Int. J. Mass Spectrom. Ion Phys. 103, 45 (1990).

    ADS  Article  Google Scholar 

  12. 12.

    Y. Marie, Y. Gao, F. Saldi, and H. N. Migeon, Surf. Interface Anal. 23, 38 (1994).

    Article  Google Scholar 

  13. 13.

    T. Greh, Improvements in TOF-SIMS Instrumentation for Analytical Application and Fundamental Research, Inaugural-Dissertation zur Erlangung des Doktorgrades der Naturwissenschaften im Fachbereich Physik (Westfalischen-Wilhelms Universität, Münster, 2003), p. 100; http://deposit.ddb.de/cgibin/dokserv?idn=967441099&dok-var=d1&dok-ext=pdf&filename= 967441099.pdf.

    Google Scholar 

  14. 14.

    V. I. Rudakov, Yu. I. Denisenko, V. V. Naumov, and S. G. Simakin, Pis’ma Zh Tekh. Fiz. 37(3), 36 (2011) [Tech Phys. Lett. 37, 112 (2011)].

    Google Scholar 

  15. 15.

    N. S. Boltovets, V. N. Ivanov, R. V. Konakova, et al., Zh. Tekh. Fiz. 73(4), 63 (2003) [Tech. Phys. 48, 441 (2003)].

    Google Scholar 

  16. 16.

    M. V. Gomoyunova, I. I. Pronin, D. E. Malygin, et al., Fiz. Tverd. Tela (St. Petersburg) 47, 1901 (2005) [Phys. Solid State 47, 1980 (2005)].

    Google Scholar 

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Correspondence to V. I. Rudakov.

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Original Russian Text © V.I. Rudakov, Yu.I. Denisenko, V.V. Naumov, S.G. Simakin, 2012, published in Zhurnal Tekhnicheskoi Fiziki, 2012, Vol. 82, No. 2, pp. 122–128.

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Rudakov, V.I., Denisenko, Y.I., Naumov, V.V. et al. Formation and investigation of cobalt silicide ultrathin layers in Ti/Co/Ti-, TiN/Ti/Co-, and TiN/Co-on-silicon structures. Tech. Phys. 57, 279–285 (2012). https://doi.org/10.1134/S1063784212020235

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Keywords

  • Auger Electron Spectroscopy
  • Rapid Thermal Annealing
  • Sacrificial Layer
  • Layer Analysis
  • Silicide Formation