Abstract
The formation of ultrathin CoSi2 layers in Ti(8 nm)/Co(10 nm)/Ti(5 nm), TiN(18 nm)/Ti(2 nm)/Co(8 nm), and TiN(18 nm)/Co(8 nm) systems magnetron-sputtered on the Si(100) surface is studied. The systems are subjected to two-step rapid thermal annealing. In between the annealing steps, the “sacrificial” layer is chemically removed and the second and third systems are additionally covered by a 17-nm-thick amorphous silicon (α-Si) layer. In the course of the fabrication process, the structures are examined using time-of-flight secondary-ion (cation) mass spectrometry, Auger electron spectroscopy, and scanning electron microscopy combined with X-ray energy dispersion microanalysis. It is shown that the above complex of analytical investigation provides efficient physical control of ultrathin silicide layer formation.
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Original Russian Text © V.I. Rudakov, Yu.I. Denisenko, V.V. Naumov, S.G. Simakin, 2012, published in Zhurnal Tekhnicheskoi Fiziki, 2012, Vol. 82, No. 2, pp. 122–128.
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Rudakov, V.I., Denisenko, Y.I., Naumov, V.V. et al. Formation and investigation of cobalt silicide ultrathin layers in Ti/Co/Ti-, TiN/Ti/Co-, and TiN/Co-on-silicon structures. Tech. Phys. 57, 279–285 (2012). https://doi.org/10.1134/S1063784212020235
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DOI: https://doi.org/10.1134/S1063784212020235