Technical Physics

, Volume 57, Issue 2, pp 279–285 | Cite as

Formation and investigation of cobalt silicide ultrathin layers in Ti/Co/Ti-, TiN/Ti/Co-, and TiN/Co-on-silicon structures

  • V. I. RudakovEmail author
  • Yu. I. Denisenko
  • V. V. Naumov
  • S. G. Simakin
Surface, Electron and Ion Emission


The formation of ultrathin CoSi2 layers in Ti(8 nm)/Co(10 nm)/Ti(5 nm), TiN(18 nm)/Ti(2 nm)/Co(8 nm), and TiN(18 nm)/Co(8 nm) systems magnetron-sputtered on the Si(100) surface is studied. The systems are subjected to two-step rapid thermal annealing. In between the annealing steps, the “sacrificial” layer is chemically removed and the second and third systems are additionally covered by a 17-nm-thick amorphous silicon (α-Si) layer. In the course of the fabrication process, the structures are examined using time-of-flight secondary-ion (cation) mass spectrometry, Auger electron spectroscopy, and scanning electron microscopy combined with X-ray energy dispersion microanalysis. It is shown that the above complex of analytical investigation provides efficient physical control of ultrathin silicide layer formation.


Auger Electron Spectroscopy Rapid Thermal Annealing Sacrificial Layer Layer Analysis Silicide Formation 
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Copyright information

© Pleiades Publishing, Ltd. 2012

Authors and Affiliations

  • V. I. Rudakov
    • 1
    Email author
  • Yu. I. Denisenko
    • 1
  • V. V. Naumov
    • 1
  • S. G. Simakin
    • 1
  1. 1.Institute of Physics and Technology, Yaroslavl BranchRussian Academy of SciencesYaroslavlRussia

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