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Technical Physics

, Volume 57, Issue 2, pp 279–285 | Cite as

Formation and investigation of cobalt silicide ultrathin layers in Ti/Co/Ti-, TiN/Ti/Co-, and TiN/Co-on-silicon structures

  • V. I. RudakovEmail author
  • Yu. I. Denisenko
  • V. V. Naumov
  • S. G. Simakin
Surface, Electron and Ion Emission

Abstract

The formation of ultrathin CoSi2 layers in Ti(8 nm)/Co(10 nm)/Ti(5 nm), TiN(18 nm)/Ti(2 nm)/Co(8 nm), and TiN(18 nm)/Co(8 nm) systems magnetron-sputtered on the Si(100) surface is studied. The systems are subjected to two-step rapid thermal annealing. In between the annealing steps, the “sacrificial” layer is chemically removed and the second and third systems are additionally covered by a 17-nm-thick amorphous silicon (α-Si) layer. In the course of the fabrication process, the structures are examined using time-of-flight secondary-ion (cation) mass spectrometry, Auger electron spectroscopy, and scanning electron microscopy combined with X-ray energy dispersion microanalysis. It is shown that the above complex of analytical investigation provides efficient physical control of ultrathin silicide layer formation.

Keywords

Auger Electron Spectroscopy Rapid Thermal Annealing Sacrificial Layer Layer Analysis Silicide Formation 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    F. Wacquant, C. Regnier, M.-T. Basco, and C. Julien, in Proceedings of the International Symposium on Advanced Short-Time Thermal Processing for Si-Based CMOS Devices, Palais, 2003, Ed. by F. Roozeboom, et al. (The Electrochem. Soc.), pp. 191–196.Google Scholar
  2. 2.
    Bei Li and Jianlin Liu, J. Appl. Phys. 105, 084905 (2009).ADSCrossRefGoogle Scholar
  3. 3.
    S. P. Murarka, Silicides for VLSI: Applications (Academic, New York-London, 1983; Mir, Moscow, 1986).Google Scholar
  4. 4.
    R. A. Donaton, K. Maex, A. Vantomme, et al., Appl. Phys. Lett. 70, 1266 (1997).ADSCrossRefGoogle Scholar
  5. 5.
    I. V. Belousov, G. V. Kuznetsov, and O. P. Pchelyakov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 40, 909 (2006) [Semiconductors 40, 881 (2006)].Google Scholar
  6. 6.
    C. Detavernier, C. Lavoie, and R. L. van Meirhaeghe, Thin Solid Films 468, 174 (2004).ADSCrossRefGoogle Scholar
  7. 7.
    V. I. Rudakov and V. N. Gusev, Mikroelektronika 37, 245 (2008).Google Scholar
  8. 8.
    US Patent No. 6410429 (March 1, 2001).Google Scholar
  9. 9.
    M. Vulpio, D. Fazio, M. Bileci, et al., in Proceedings of the 204th Electrochem. Soc. Meeting, Orlando, 2003, Abstract 594.Google Scholar
  10. 10.
    Y. Gao, J. Appl. Phys. 64, 3760 (1988).ADSCrossRefGoogle Scholar
  11. 11.
    C. W. Magee, W. L. Harrington, and E. M. Botnick, Int. J. Mass Spectrom. Ion Phys. 103, 45 (1990).ADSCrossRefGoogle Scholar
  12. 12.
    Y. Marie, Y. Gao, F. Saldi, and H. N. Migeon, Surf. Interface Anal. 23, 38 (1994).CrossRefGoogle Scholar
  13. 13.
    T. Greh, Improvements in TOF-SIMS Instrumentation for Analytical Application and Fundamental Research, Inaugural-Dissertation zur Erlangung des Doktorgrades der Naturwissenschaften im Fachbereich Physik (Westfalischen-Wilhelms Universität, Münster, 2003), p. 100; http://deposit.ddb.de/cgibin/dokserv?idn=967441099&dok-var=d1&dok-ext=pdf&filename= 967441099.pdf.Google Scholar
  14. 14.
    V. I. Rudakov, Yu. I. Denisenko, V. V. Naumov, and S. G. Simakin, Pis’ma Zh Tekh. Fiz. 37(3), 36 (2011) [Tech Phys. Lett. 37, 112 (2011)].Google Scholar
  15. 15.
    N. S. Boltovets, V. N. Ivanov, R. V. Konakova, et al., Zh. Tekh. Fiz. 73(4), 63 (2003) [Tech. Phys. 48, 441 (2003)].Google Scholar
  16. 16.
    M. V. Gomoyunova, I. I. Pronin, D. E. Malygin, et al., Fiz. Tverd. Tela (St. Petersburg) 47, 1901 (2005) [Phys. Solid State 47, 1980 (2005)].Google Scholar

Copyright information

© Pleiades Publishing, Ltd. 2012

Authors and Affiliations

  • V. I. Rudakov
    • 1
    Email author
  • Yu. I. Denisenko
    • 1
  • V. V. Naumov
    • 1
  • S. G. Simakin
    • 1
  1. 1.Institute of Physics and Technology, Yaroslavl BranchRussian Academy of SciencesYaroslavlRussia

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