Abstract
A setup is developed for measuring the spectra of wideband semiconductors (III nitrides) and related heterostructures. The setup makes it possible to trace the time distribution of the luminescence intensity at a fixed wavelength with a resolution of ±5 ns and a sampling rate of up to 10 MHz in the time interval from several microseconds to several hundreds of microseconds. Also, it plots the integral intensity of luminescence versus the wavelength. Precision measurement conditions are provided.
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Original Russian Text © Yu.V. Tubol’tsev, M.M. Mezdrogina, E.M. Khil’kevich, Yu.V. Chichagov, N.K. Poletaev, R.V. Kuz’min, 2011, published in Zhurnal Tekhnicheskoĭ Fiziki, 2011, Vol. 81, No. 9, pp. 77–81.
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Tubol’tsev, Y.V., Mezdrogina, M.M., Khil’kevich, E.M. et al. Setup for taking the radiation spectra of wideband semiconductors. Tech. Phys. 56, 1297–1301 (2011). https://doi.org/10.1134/S1063784211090271
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DOI: https://doi.org/10.1134/S1063784211090271