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Spontaneous transverse field in impurity graphene

Technical Physics volume 56, pages 1123–1128 (2011)Cite this article

Abstract

The periodic Anderson model and the average electron method are used to show that an electric field normal to an applied dc electric field can spontaneously appear in impurity-containing graphene. This effect can be related to a nonequilibrium electron subsystem in graphene. The characteristics of the spontaneous field are revealed as a function of the problem parameters.

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Authors and Affiliations

  1. Volgograd State University, Vtoraya Prodol’naya ul. 30, Volgograd, 400062, Russia

    M. B. Belonenko, N. G. Lebedev, A. V. Pak & N. N. Yanyushkina

Authors
  1. M. B. Belonenko
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  2. N. G. Lebedev
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  3. A. V. Pak
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  4. N. N. Yanyushkina
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Corresponding author

Correspondence to A. V. Pak.

Additional information

Original Russian Text © M.B. Belonenko, N.G. Lebedev, A.V. Pak, N.N. Yanyushkina, 2011, published in Zhurnal Tekhnicheskoĭ Fiziki, 2011, Vol. 81, No. 8, pp. 64–69.

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Belonenko, M.B., Lebedev, N.G., Pak, A.V. et al. Spontaneous transverse field in impurity graphene. Tech. Phys. 56, 1123–1128 (2011). https://doi.org/10.1134/S1063784211080068

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  • DOI: https://doi.org/10.1134/S1063784211080068

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