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Conductivity of semiconductor diodes with simultaneously applied direct and alternating biases

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Abstract

The influence of a high-amplitude high-frequency signal on the static current-voltage characteristics of commercial semiconductor p-n junction diodes is studied experimentally. S-shaped regions are observed in the direct branches of the current-voltage characteristics over a wide frequency range, and a bell-shaped segment is seen in the reverse branches. The value and position of the latter on the voltage axis considerably depend on the alternating signal frequency.

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Authors and Affiliations

  1. Amirkhanov Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences, ul. Yagarskogo 94, Makhachkala, 367003, Dagestan, Russia

    K. M. Aliev, I. K. Kamilov, Kh. O. Ibragimov & N. S. Abakarova

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  1. K. M. Aliev
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  2. I. K. Kamilov
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  3. Kh. O. Ibragimov
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  4. N. S. Abakarova
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Corresponding author

Correspondence to N. S. Abakarova.

Additional information

Original Russian Text © K.M. Aliev, I.K. Kamilov, Kh.O. Ibragimov, N.S. Abakarova, 2011, published in Zhurnal Tekhnicheskoȝ Fiziki, 2011, Vol. 81, No. 2, pp. 141–143.

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Aliev, K.M., Kamilov, I.K., Ibragimov, K.O. et al. Conductivity of semiconductor diodes with simultaneously applied direct and alternating biases. Tech. Phys. 56, 298–300 (2011). https://doi.org/10.1134/S1063784211020022

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  • DOI: https://doi.org/10.1134/S1063784211020022

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