Abstract
The effect of doping CdIn2S4 single crystals by copper (3 mol %) on their X-ray dosimetric characteristics is investigated. It is found that the characteristic X-ray conductivity of CdIn2S4〈Cu〉 single crystals increases 3–16 times compared with undoped CdIn2S4 at effective radiation hardness V a = 25−50 keV and dose rate E = 0.75−78.05 R/min. Moreover, the persistence of the crystal characteristics completely disappears and the supply voltage of a CdIn2S4〈Cu〉 X-ray detector decreases fivefold. The dependence of the steady X-ray-induced current in CdIn2S4〈Cu〉 on the X-ray dose is described as ΔI E, 0 ∝ E α, where 0.6 ≤ α ≤ 1.8.
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Original Russian Text © S.N. Mustafaeva, M.M. Asadov, D.T. Guseynov, 2011, published in Zhurnal Tekhnicheskoĭ Fiziki, 2011, Vol. 81, No. 1, pp. 144–147.
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Mustafaeva, S.N., Asadov, M.M. & Guseynov, D.T. X-ray dosimetric characteristics of CdIn2S4〈Cu〉 single crystals. Tech. Phys. 56, 139–142 (2011). https://doi.org/10.1134/S1063784211010178
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DOI: https://doi.org/10.1134/S1063784211010178