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Cascode turn-off of field-controlled integrated thyristors

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Abstract

The residual voltage drop in the on state of an insulated-gate bipolar transistor, the basic device of today’s power electronics, is considerably higher than that of conventional thyristor-type devices, which is a serious disadvantage of the former. Field-controlled integrated thyristors offering a low residual voltage, as with conventional thyristors, and, at the same time, low turn-on and turn-off power losses in the control circuit, as is the case with insulated-gate bipolar transistors, seem to be promising for high-voltage high-power applications. Turn-off of these devices in the cascode mode with a series-connected low-voltage powerful FET is studied.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    I. V. Grekhov, A. V. Rozhkov, L. S. Kostina & D. V. Mashovets

  2. ZAO Svetlana-Poluprovodniki, pr. Engel’sa 27, St. Petersburg, 194156, Russia

    N. F. Zitta & V. I. Matveev

Authors
  1. I. V. Grekhov
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  2. A. V. Rozhkov
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  3. L. S. Kostina
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  4. N. F. Zitta
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  5. V. I. Matveev
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  6. D. V. Mashovets
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Corresponding author

Correspondence to L. S. Kostina.

Additional information

Original Russian Text © I.V. Grekhov, A.V. Rozhkov, L.S. Kostina, N.F. Zitta, V.I. Matveev, D.V. Mashovets, 2010, published in Zhurnal Tekhnicheskoĭ Fiziki, 2010, Vol. 80, No. 1, pp. 155–160.

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Grekhov, I.V., Rozhkov, A.V., Kostina, L.S. et al. Cascode turn-off of field-controlled integrated thyristors. Tech. Phys. 55, 154–157 (2010). https://doi.org/10.1134/S1063784210010275

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  • DOI: https://doi.org/10.1134/S1063784210010275

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