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Electric performance and photosensitivity of heterostructures prepared by thermal decomposition of a gallium nitrate aqueous solution on an indium selenide (0001) cleaved surface

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Abstract

It is shown that thermal decomposition of a gallium nitrate aqueous solution on the surface of a semiconductor in air can basically be used for preparing structures sensitive to radiation from in the near-UV spectral range. The electric and photovoltaic properties of Ga2O3-n-(p-)InSe heterostructures are studied. It is found that a high-ohmic layer arising at the InSe-Ga2O3 interface affects not only the electric performance but also the photoelectric spectra of the heterostructures. It is supposed that current instability with Z- and N-shaped reverse branches in the I-V characteristics of the Ga2O3-p-InSe structures stems from doping nonuniformity in the bulk of quasi-two-dimensional p-type indium selenide.

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Authors and Affiliations

  1. Chernivtsi Department, Frantsevich Institute of Materials Science Problems, National Academy of Sciences of Ukraine, Chernivtsi, 58001, Ukraine

    S. I. Drapak & Z. D. Kovalyuk

  2. Fed’kovych National University, ul. Kotsubinskogo 2, Chernivtsi, 58012, Ukraine

    N. S. Yurtsenyuk

Authors
  1. S. I. Drapak
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  2. N. S. Yurtsenyuk
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  3. Z. D. Kovalyuk
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Correspondence to S. I. Drapak.

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Original Russian Text © S.I. Drapak, N.S. Yurtsenyuk, Z.D. Kovalyuk, 2009, published in Zhurnal Tekhnicheskoĭ Fiziki, 2009, Vol. 79, No. 3, pp. 71–75.

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Drapak, S.I., Yurtsenyuk, N.S. & Kovalyuk, Z.D. Electric performance and photosensitivity of heterostructures prepared by thermal decomposition of a gallium nitrate aqueous solution on an indium selenide (0001) cleaved surface. Tech. Phys. 54, 397–401 (2009). https://doi.org/10.1134/S1063784209030116

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  • DOI: https://doi.org/10.1134/S1063784209030116

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