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Formation and electron-beam annealing of implantation defects in a thin-film Si-SiO2 heterostructure

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Abstract

The radiation-induced defects in a 20-nm-thick SiO2 film on a silicon wafer are studied by optically stimulated electron emission. Accelerated (12-keV) silicon ions is found to generate various oxygen-deficient centers, among which E′-type defects are dominant. Subsequent irradiation by 23-MeV electrons changes the defect structure of the SiO2 film: the defects induced by ion implantation decompose.

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Authors and Affiliations

  1. Ural State Technical University, ul. Mira 19, Yekaterinburg, 620002, Russia

    A. F. Zatsepin, D. Yu. Biryukov & E. A. Buntov

  2. Institute of Solid State Physics, 72 Tzarigradsko Chaussee, Sofia, 1874, Bulgaria

    S. Kaschieva

  3. Joint Institute for Nuclear Research, Dubna, Moscow oblast, 141980, Russia

    S. N. Dmitriev

Authors
  1. A. F. Zatsepin
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  2. S. Kaschieva
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  3. D. Yu. Biryukov
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  4. S. N. Dmitriev
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  5. E. A. Buntov
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Corresponding author

Correspondence to A. F. Zatsepin.

Additional information

Original Russian Text © A.F. Zatsepin, S. Kaschieva, D.Yu. Biryukov, S.N. Dmitriev, E.A. Buntov, 2009, published in Zhurnal Tekhnicheskoĭ Fiziki, 2009, Vol. 79, No. 2, pp. 155–158

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Zatsepin, A.F., Kaschieva, S., Biryukov, D.Y. et al. Formation and electron-beam annealing of implantation defects in a thin-film Si-SiO2 heterostructure. Tech. Phys. 54, 323–326 (2009). https://doi.org/10.1134/S1063784209020285

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  • DOI: https://doi.org/10.1134/S1063784209020285

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