Abstract
Recording of optical holographic gratings based on photostructural transformations in thin (≈ 1 μm) As2S3 and As2S3 semiconductor layers in the presence and absence of a corona discharge and also chemical etching of these gratings are studied. Initiation of a corona at the stage of interference grating recording is shown to improve the exposure contrast of metal-glassy chalcogenide semiconductor thin-film structures. The holographic sensitivity, diffraction efficiency, dynamic range, and contrast are also improved severalfold. When phase relief gratings formed in these layers are selectively etched in a chemical etchant in the presence of a corona, their profile becomes more regular and deeper by 25–30% and the diffraction efficiency increases by 30–50%.
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Original Russian Text © A.M. Nastas, A.M. Andriesh, V.V. Bivol, A.M. Prisakar, G.M. Tridukh, 2009, published in Zhurnal Tekhnicheskoĭ Fiziki, 2009, Vol. 79, No. 2, pp. 139–142.
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Nastas, A.M., Andriesh, A.M., Bivol, V.V. et al. Charging of glassy chalcogenide semiconductors in corona discharge and its effect on holographic grating formation. Tech. Phys. 54, 305–308 (2009). https://doi.org/10.1134/S1063784209020236
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DOI: https://doi.org/10.1134/S1063784209020236