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Technical Physics

, Volume 53, Issue 9, pp 1243–1246 | Cite as

Current-voltage characteristic of a narrow-band semiconductor taking into account ionization of impurities

  • D. V. Zav’yalovEmail author
  • S. V. Kryuchkov
  • E. V. Marchuk
Short Communications
  • 35 Downloads

Abstract

The current-voltage characteristic of a material with a narrow conduction band in a strong electric field is studied taking into account ionization of deeply lying impurities in the model, in which collisions of charge carriers are described in the Fokker-Planck approximation. The results are compared with analogous results obtained in the v approximation. It is shown that the results obtained earlier in the v approximation coincide with our results to within ∼ 5%. It is noted that the Fokker-Planck model additionally provides the temperature dependence of the current-voltage characteristic.

PACS numbers

72.30.+q 73.21.Cd 78.67.-n 

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Copyright information

© Pleiades Publishing, Ltd. 2008

Authors and Affiliations

  • D. V. Zav’yalov
    • 1
    Email author
  • S. V. Kryuchkov
    • 1
  • E. V. Marchuk
    • 1
  1. 1.Volgograd State Pedagogical UniversityVolgogradRussia

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