Abstract
The early stages of iron silicide formation in the Fe/SiO x /Si(100) ternary system during solid-phase epitaxy are studied by high-resolution (∼100 meV) photoelectron spectroscopy using synchrotron radiation. The spectra of core and valence electrons taken after a number of isochronous heat treatments of the samples at 750°C are analyzed. It is found that the solid-phase reaction between Fe and Si atoms proceeds in the vicinity of the SiO x /Si interface, which metal atoms reach when deposited on the sample surface at room temperature. Iron silicide starts forming at 60°C. Solid-phase synthesis is shown to proceed in two stages: the formation of the metastable FeSi interfacial phase with a CsCl-like structure and the formation of the stable β-FeSi2 phase. During annealing, structural modification of the silicon oxide occurs, which shows up in the growth of the Si+4 peaks and attenuation of the Si+2 peaks.
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Original Russian Text © A.S. Voronchikhin, M.V. Gomoyunova, D.E. Malygin, I.I. Pronin, 2007, published in Zhurnal Tekhnicheskoĭ, 2007, Vol. 77, No. 12, pp. 55–60.
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Voronchikhin, A.S., Gomoyunova, M.V., Malygin, D.E. et al. Formation of interfacial iron silicides on the oxidized silicon surface during solid-phase epitaxy. Tech. Phys. 52, 1586–1591 (2007). https://doi.org/10.1134/S1063784207120109
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DOI: https://doi.org/10.1134/S1063784207120109