Abstract
The characteristics of a photovoltaic X-ray detector based on the GaAs p +-n-n′-n + epitaxial structure grown using gas-phase epitaxy are studied. Typical current-voltage and capacitance-voltage characteristics of the epitaxial structures are analyzed together with the built-in electric field profile in the n-GaAs depleted region. The efficiency of charge accumulation in the photovoltaic detector is measured for zero bias and for a bias voltage of 17 V. It is shown that the GaAs-based photovoltaic X-ray detector can operate with zero bias voltage at room temperature. The sensitivity of the detector is measured as a function of the effective energy of X-rays and the angle of incidence of X-ray photons.
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Original Russian Text © V.F. Dvoryankin, G.G. Dvoryankina, Yu.M. Dikaev, M.G. Ermakov, O.N. Ermakova, A.A. Kudryashov, A.G. Petrov, A.A. Telegin, 2007, published in Zhurnal Tekhnicheskoĭ Fiziki, 2007, Vol. 77, No. 10, pp. 121–124.
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Dvoryankin, V.F., Dvoryankina, G.G., Dikaev, Y.M. et al. Characteristics of a photovoltaic X-ray detector based on a GaAs epitaxial structure. Tech. Phys. 52, 1369–1372 (2007). https://doi.org/10.1134/S1063784207100209
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DOI: https://doi.org/10.1134/S1063784207100209