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Modification of the defect structure in binary semiconductors under the action of microwave radiation

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Abstract

Possible athermic processes caused by microwave processing (at f = 2.45 and 84 GHz) of semiconductors that influence their structure are analyzed. Models explaining the variation of the concentration of point and extended defects upon microwave irradiation are proposed. These models are qualitatively corroborated by experimental data for the structure and luminescence of semiconductors.

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Authors and Affiliations

  1. Lashkarev Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, pr. Nauki 45, Kiev, 03028, Ukraine

    I. B. Ermolovich, G. V. Milenin, V. V. Milenin, R. V. Konakova & R. A. Red’ko

Authors
  1. I. B. Ermolovich
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  2. G. V. Milenin
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  3. V. V. Milenin
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  4. R. V. Konakova
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  5. R. A. Red’ko
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Correspondence to I. B. Ermolovich.

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Original Russian Text © I.B. Ermolovich, G.V. Milenin, V.V. Milenin, R.V.Konakova, R.A. Red’ko, 2007, published in Zhurnal Tekhnicheskoĭ Fiziki, 2007, Vol. 77, No. 9, pp. 71–75.

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Ermolovich, I.B., Milenin, G.V., Milenin, V.V. et al. Modification of the defect structure in binary semiconductors under the action of microwave radiation. Tech. Phys. 52, 1173–1177 (2007). https://doi.org/10.1134/S1063784207090113

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  • DOI: https://doi.org/10.1134/S1063784207090113

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