On the theory of stoichiometric binary compound films by reactive magnetron sputtering

Abstract

The theoretical model of reactive sputtering of binary compounds has been improved; the model makes it possible to calculate the stoichiometry condition for these compounds by taking into account the adhesion of molecules of the reacting gas at the regions of the surface occupied by a binary compound, followed by their diffusion to free titanium atoms. It is shown that surface diffusion of reacting gas molecules facilitates the formation of a stoichiometric binary compound, stabilizes the sputtering process, increases its rate, and makes the synthesis of the binary compound on a getter prevailing over cathode sputtering of this compound.