Abstract
The temperature range of epitaxial YSZ film growth on silicon with natural oxide, which is narrow (≈20°C) under conventional magnetron sputtering conditions, is experimentally shown to be extended to 150°C due to a decrease in the lower boundary when the film surface is irradiated by ions from the plasma adjacent to the substrate. The required ion energy is E ≥ 80 eV. Current passage in the plasma-film-substrate circuit is accompanied by oxygen ion transport to the YSZ film and leads to the formation of specific defects in it. Defect-free atomically smooth epitaxial films can be grown over wide temperature and ion-energy ranges during ion irradiation with a zero time-averaged current through the film that is caused by an HF bias voltage applied to an insulated substrate.
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Original Russian Text © V.G. Beshenkov, A.G. Znamenskii, V.A. Marchenko, A.N. Pustovit, A.V. Chernykh, 2007, published in Zhurnal Tekhnicheskoĭ Fiziki, 2007, Vol. 77, No. 5, pp. 102–107.
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Beshenkov, V.G., Znamenskii, A.G., Marchenko, V.A. et al. Extension of the temperature range of epitaxial YSZ film growth on Si(100) during magnetron sputtering. Tech. Phys. 52, 636–641 (2007). https://doi.org/10.1134/S1063784207050167
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DOI: https://doi.org/10.1134/S1063784207050167