Abstract
A new approach to describe phenomena attendant on the growth of thin InGaAs epitaxial layers by hydride MOCVD in terms of which the boundary gas layer is considered as quasi-liquid is suggested. A numerical model for simulating the concentration profiles of the components in quantum-well heterostructures is developed. It is based on the assumption that a state close to thermodynamic equilibrium exists near the interface. The concentration profiles are simulated by jointly solving equations that describe heterogeneous equilibria and material balance at the interface. The indium profiles in InGaAs/GaAs quantum-size heterostructures are simulated at various parameters of the epitaxy process, such as temperature, initial component ratio in the gas phase, and boundary layer thickness. The results obtained agree well with the available experimental data.
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Original Russian Text © R.Kh. Akchurin, L.B. Berliner, A.A. Marmalyuk, 2007, published in Zhurnal Tekhnicheskoĭ Fiziki, 2007, Vol. 77, No. 3, pp. 55–61.
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Akchurin, R.K., Berliner, L.B. & Marmalyuk, A.A. Simulation of the indium profile in InGaAs/GaAs quantum-size heterostructures. Tech. Phys. 52, 345–351 (2007). https://doi.org/10.1134/S1063784207030103
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DOI: https://doi.org/10.1134/S1063784207030103