Abstract
The melting and crystallization of single-crystal silicon wafers exposed to compression plasma flows generated by quasi-stationary plasma accelerators are studied by numerical simulation. The results include the phase transition kinetics described on the basis of the Kolmogorov equation. The space-time characteristics of the melting and crystallization processes for variously shaped plasma pulses are discussed. Based on the experimental data and estimates, it is concluded that thermoelectric instability plays an essential role in the formation of three-dimensional periodic structures.
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Original Russian Text © S.I. Ananin, V.M. Astashinsky, A.S. Emel’yanenko, E.A. Kostyukevich, A.M. Kuz’mitski, S.P. Zhvavy, V.M. Anishchik, V.V. Uglov, A.V. Pun’ko, 2006, published in Zhurnal Tekhnicheskoĭ Fiziki, 2006, Vol. 76, No. 7, pp. 34–40.
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Ananin, S.I., Astashinsky, V.M., Emel’yanenko, A.S. et al. Melting and crystallization dynamics of single-crystal silicon exposed to compression plasma flows. Tech. Phys. 51, 853–859 (2006). https://doi.org/10.1134/S1063784206070061
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DOI: https://doi.org/10.1134/S1063784206070061