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Effect of oligomers on the growth of amorphous silicon films in a PECVD reactor

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Abstract

A plasma-chemical model of processes in a PECVD reactor is constructed that is an extension of the earlier model and takes into account the formation of oligomers SinHm (n ≤ 5). The corresponding scheme of chemical reactions is developed, and simulation of film growth is carried out. It is found that Si2H5 and Si3H7 components strongly influence the film growth. It is of interest to obtain more reliable experimental data dramatizing these effects.

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Authors and Affiliations

  1. St. Petersburg State Polytechnical University, ul. Politekhnicheskaya 29, St. Petersburg, 195251, Russia

    Yu. E. Gorbachev

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  1. Yu. E. Gorbachev
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Original Russian Text © Yu.E. Gorbachev, 2006, published in Zhurnal Tekhnicheskoĭ Fiziki, 2006, Vol. 76, No. 6, pp. 55–61.

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Gorbachev, Y.E. Effect of oligomers on the growth of amorphous silicon films in a PECVD reactor. Tech. Phys. 51, 733–739 (2006). https://doi.org/10.1134/S1063784206060089

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  • DOI: https://doi.org/10.1134/S1063784206060089

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