Abstract
Consecutive stages of synthesizing epitaxial SiC films on n-type Si(111) and p-type Si(111) surfaces in a mixture of gaseous carbon monoxide and silane are studied by X-ray diffraction and Raman scattering methods. In films grown on an n-type Si(111) surface, only weak elastic deformations are observed during synthesis; however, in films grown on p-type Si substrates, relatively strong elastic deformations form, which are completely relaxed by the 40th min. It is found that the film structure is sharply changed at the third minute of the growth, which is related to the formation and growth of pores in the SiC layer. The differences of the lattice parameters of SiC films grown on n-Si and p-Si substrates are determined and confirmed by analyzing the change in the curvatures of the SiC/Si plates.
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ACKNOWLEDGMENTS
This work was carried out using the equipment of the Unique Scientific Installation “Rhysics, Chemistry, and Mechanics of Crystals and Thin Films” at the Institute of Machine Science Problems of the Russian Academy of -Sciences.
Funding
Yu.A. Eremeev, S.A. Kukushkin, M.G. Vorobev, and A.V. Osipov performed their part of this work in the framework of the State Assignment no. FFNF-2021-0001 of the Ministry of Science and Higher Education of the Russian Federation to the Institute of Machine Science Problems of the Russian Academy of Sciences. A.S. Grashchenko performed his part of this work with the support of the Ministry of Science and Higher Education of the Russian Federation in the framework of the State Assignment to Si. Petersburg State University (Contract no. 75746688). A.V. Semencha performed his part of this work in the framework of the State Assignment no. 0784-2020-0022 for fundamental research.
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Translated by Yu. Ryzhkov
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Eremeev, Y.A., Vorobev, M.G., Grashchenko, A.S. et al. Change in Elastic Deformations in SiC Films during Their Growth by the Coordinated Atomic Substitution Method on Si Substrates. Phys. Solid State 64, 511–515 (2022). https://doi.org/10.1134/S1063783422110038
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DOI: https://doi.org/10.1134/S1063783422110038