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Electron Beam Lithography Fabrication of Superconducting Tunnel Structures

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Abstract

An electron beam lithography technique for fabricating submicron Nb–AlN–NbN junctions has been developed and optimized. An exposure dose, development time, and plasma-chemical etching parameters that would ensure the maximum quality parameter of the Rj/Rn tunnel junctions have been selected. The use of negative resist ma-N 2400 with a lower sensitivity and better contrast as compared with resist UVN 2300-0.5 has made it possible to improve the reproducibility of the structure fabrication process and fabricate the submicron Nb–AlN–NbN tunnel junctions (an area from 2.0 to 0.2 μm2) with a high current density and a quality parameter of Rj/Rn > 15. The spread of the parameters of the submicron tunneling structures over a substrate and the cycle-to-cycle reproducibility of the structure fabrication process have been experimentally measured.

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Funding

This study was supported by the Russian Science Foundation, project no. 19-19-00618. The tunnel structures were fabricated at the Kotel’nikov Institute of Radio Engineering and Electronics within the state assignment using a UNU 352529 large-scale research facility.

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Authors and Affiliations

  1. Kotel’nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 125009, Moscow, Russia

    M. Yu. Fominskii, L. V. Filippenko, A. M. Chekushkin & V. P. Koshelets

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  1. M. Yu. Fominskii
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  2. L. V. Filippenko
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  3. A. M. Chekushkin
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  4. V. P. Koshelets
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Correspondence to M. Yu. Fominskii.

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The authors declare that they have no conflicts of interest.

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Translated by E. Bondareva

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Fominskii, M.Y., Filippenko, L.V., Chekushkin, A.M. et al. Electron Beam Lithography Fabrication of Superconducting Tunnel Structures. Phys. Solid State 63, 1351–1355 (2021). https://doi.org/10.1134/S1063783421090067

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  • DOI: https://doi.org/10.1134/S1063783421090067

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