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Band Diagram of the InAs1 – ySby/InAsSbP Heterojunction in the Composition Range y < 0.2

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Abstract

The n+-InAs/n0-InAs1 – ySby/p-InAsSbP heterostructures with asymmetric band offsets at the heteroboundaries of the active region have been grown by vapor-phase epitaxy from organometallic compounds on InAs substrates. The forward branch of the current–voltage characteristics of the obtained heterostructures at low temperatures has segments with the tunneling conduction. The energy-band diagram of the double InAs/InAs1 – ySby/InAsSbP heterostructure is calculated in the range of compositions (y < 0.2) of the narrow-gap active region. The InAs1 – ySby/InAsSbP heterojunction is shown to be a II type heterojunction in this composition range. The electroluminescence observed in the experiment for the n+-InAs/n0-InAs1 ‒ ySby/p-InAsSbP heterostructures with the active region in compositions y > 0.14 is due to interface radiative transitions with participation of localized hole states at the II type heteroboundary.

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Authors and Affiliations

  1. Ioffe Institute, 194021, St. Petersburg, Russia

    K. D. Moiseev & V. V. Romanov

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  1. K. D. Moiseev
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  2. V. V. Romanov
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Correspondence to K. D. Moiseev.

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Translated by Yu. Ryzhkov

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Moiseev, K.D., Romanov, V.V. Band Diagram of the InAs1 – ySby/InAsSbP Heterojunction in the Composition Range y < 0.2. Phys. Solid State 63, 595–602 (2021). https://doi.org/10.1134/S1063783421040156

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