Abstract
Bulk β-Ga2O3 samples grown by the Czochralski method are studied. Based on the studies of the absorbed current dynamics and the cathodoluminescence, it is shown that there is a localization of charges of both signs in the sample. The electron localization is demonstrated to lead to a substantial decrease in cathodoluminescence intensity.
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This work was supported by the Russian Scientific Foundation, project no. 19-19-00686.
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Translated by Yu. Ryzhkov
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Ivanova, E.V., Dementev, P.A., Zamoryanskaya, M.V. et al. Charge Carrier Traps in a Bulk Gallium Oxide β-Ga2O3. Phys. Solid State 63, 544–549 (2021). https://doi.org/10.1134/S1063783421040089
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DOI: https://doi.org/10.1134/S1063783421040089