Abstract
The results of investigations of the structural and electrical properties of a homoepitaxial nanoscale (001) n-GaP layer of 70 nm in thickness grown by metalorganic vapor phase epitaxy on a conductive highly doped substrate of an n-GaP crystal oriented along (001) axis are reported. In the Raman spectrum of such an n-GaP nanolayer in the n-GaP/(001) n-GaP sample, as compared to the spectrum of the high-ohmic crystalline (001) si-GaP sample, we have managed to discover two quite narrow lines attributed to vibrations of transverse TO(Γ)– phonons and high-frequency longitudinal coupled plasmon–phonon LO(Γ)+ vibrations. It is established that the spectral parameters of the LO(Γ)+ vibrations in both the n-GaP nanolayer and the (001) n-GaP substrate are significantly different from each other and from the spectral parameters of the line of longitudinal optical LO(Γ)– phonons. Analysis of the revealed strict quantitative features of the spectral parameters has made it possible to obtain valuable data on the degree of perfection of the crystal structure for the nanoscale homoepitaxial (001) n-GaP layer. In addition, it is shown that numerical calculations based on the microscopic model of light scattering by LO(Γ)+ vibrations, caused by the mechanisms of the deformation potential and electro-optical scattering, has enabled noncontact and nondestructive determination of the concentration n and mobility μ of free charge carriers in the nanoscale-thick homoepitaxial layer and the conductive highly doped substrate. The obtained values have proved to be as follows: the concentration nhepi = (3.25 ± 0.1) × 1017 cm–3 for and the mobility μhepi = (40.0 ± 0.1) cm2 V–1 s–1 for the homoepitaxial (001) n-GaP layer, against nsubs = (2.52 ± 0.1) × 1017 cm–3 and μsubs = (51.0 ± 0.1) cm2 V–1 s–1 for the (001) n-GaP substrate of the n-GaP/(001) n-GaP sample.
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REFERENCES
M. Itoh, Prog. Surf. Sci. 66, 53 (2001).
R. Kratzer, C. G. Morgan, and M. Scheffler, Phys. Rev. B 59, 15246 (1999).
Yu. G. Galitsyn, D. V. Dmitriev, V. G. Mansurov, S. P. Moshchenko, and A. I. Toropov, JETP Lett. 86, 482 (2007).
O. A. Ageev, M. Solodovnik, S. V. Balakirev, I. A. Mikhalin, and M. Eremenko, J. Cryst. Growth 457, 46 (2017).
O. S. Komkov, A. N. Pikhtin, Yu. V. Zhilyaev, and L. M. Fedorov, Tech. Phys. Lett. 34, 37 (2008).
B. Németh, W. Kunert, K. Stolz, and K. Volz, J. Cryst. Growth 310, 1595 (2008).
S. Nagarajan, H. Jussila, J. Lemettinen, K. Banerjee, M. Sopanen, and H. Lipsanen, J. Phys. D 46, 165103 (2013).
O. S. Komkov, D. D. Firsov, T. V. Lvova, I. V. Sedova, A. N. Semenov, V. A. Solov’ev, and S. V. Ivanov, Phys. Solid State 58, 2394 (2016).
K. Storm, F. Halvardsson, M. Heurlin, D. Lingren, A. Gustafsson, P. M. Wu, B. Monemar, and L. Samuelson, Nat. Nanotechnol. 7, 718 (2012).
Light Scattering in Solids, Topics in Applied Physics, Ed. M. Cardona and G. Guntherodt (Springer, Berlin, Heidelberg, New York, 1974).
B. H. Bairamov, V. A. Voitenko, V. V. Toporov, G. Irmer, and J. Monecke, Phys. Status Solidi 1, 2773 (2004).
F. H. Bayramov, G. Irmer, V. V. Toporov, and B. H. Bairamov, Jpn. J. Appl. Phys. 50, 05FE06 (2011).
B. Kh. Bairamov, V. A. Voitenko, and I. P. Ipatova, Phys. Usp. 36, 392 (1993).
B. H. Bairamov, V. A. Voitenko, and I. P. Ipatova, Phys. Rep. 229, 221 (1993).
B. H. Bairamov, I. P. Ipatova, V. V. Toporov, V. A. Voitenko, G. Irmer, J. Monecke, and E. Jahne, Appl. Surf. Sci. 50, 300 (1991).
B. H. Bairamov, V. A. Voitenko, B. P. Zakharchenya, V. V. Toporov, M. Henini, and A. J. Kent, Nanotechnology 11, 314 (2000).
G. Irmer, V. V. Toporov, B. H. Bairamov, and J. Monecke, Phys. Status Solidi 119, 595 (1983).
B. H. Bairamov A. Heinrich, G. Irmer, V. V. Toporov, and E. Ziegler, Phys. Status Solidi B 119, 227 (1983).
J. T. Holmi, B. H. Bairamov, S. Suihkonen, and H. Lipsanen, J. Cryst. Growth 499, 47 (2018).
H. Harima, J. Condens. Matter Phys. 14, 967 (2002).
S. Nakashima and H. Harima, Phys. Status Solidi 162, 39 (1997).
L. Artús, R. Cuscó, J. Ibáñez, N. Blanco, and G. González-Díaz, Phys. Rev. B 60, 5456 (1999).
B. H. Bairamov, V. V. Toporov, and F. B. Bayramov, Semiconductors 53, 2129 (2019).
B. Kh. Bairamov, V. V. Toporov, and F. B. Bairamov, Semiconductors 54 (11) (2020, in press).
F. B. Bayramov, V. V. Toporov, O. B. Chakchir, V. N. Anisimov, and B. Kh. Bairamov, Tech. Phys. Lett. 44, 505 (2018).
B. Kh. Bairamov, Phys. Solid State 58, 728 (2016).
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Bairamov, B.K., Toporov, V.V. & Bayramov, F.B. Optical Characterization of the Structural and Electrical Properties of the n-GaP Nanolayers Grown on Conductive (001) n-GaP Substrates. Phys. Solid State 63, 79–83 (2021). https://doi.org/10.1134/S1063783421010030
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DOI: https://doi.org/10.1134/S1063783421010030