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Study of Transport Phenomenon in Amorphous RexSi1 – x Thin Films on the Both Sides of the Metal–Insulator Transition at Very Low Temperatures

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Abstract

In this work, we study the electrical conductivity behaviors on the both sides of the metal-insulator transition (MIT) in RexSi1 – x amorphous thin films at very low temperature. In fact, our investigation re-analyzed the experimental measurements of RexSi1 – x obtained by K.G. Lisunov et al. On the insulating side of the MIT, the electrical conductivity can be interpreted by the existence of the variable range-hopping regime. However, on the metallic side of the MIT, the electrical conductivity is mainly due to electron–electron interactions and low localization effects.

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Authors and Affiliations

  1. Laboratory of Energetic Engineering and Materials, Faculty of Sciences Ibn Tofail, Kenitra, Morocco

    A. El Oujdi & A. Echchelh

  2. Physics Department, Faculty of Sciences, 80000, Agadir, Morocco

    S. Dlimi

  3. MPAC Group, Faculty of Sciences, BP 8106, 80000, Agadir, Morocco

    A. El Kaaouachi

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  1. A. El Oujdi
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  2. S. Dlimi
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  3. A. Echchelh
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  4. A. El Kaaouachi
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Correspondence to A. El Kaaouachi.

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El Oujdi, A., Dlimi, S., Echchelh, A. et al. Study of Transport Phenomenon in Amorphous RexSi1 – x Thin Films on the Both Sides of the Metal–Insulator Transition at Very Low Temperatures. Phys. Solid State 62, 2445–2451 (2020). https://doi.org/10.1134/S1063783420120215

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