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Forming a Type-II Heterojunction in the InAsSb/InAsSbP Semiconductor Structure

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Abstract

We report on the electroluminescent and I–V characteristics of the n-InAs/n-InAsSb/p-InAsSbP heterostructure grown by metalorganic vapor-phase epitaxy. In the spectral range of 0.23–0.29 eV, the high-intensity electroluminescence at a temperature of T = 77 K has been observed. The position of the maximum of the main emission band (\(h\nu \) ~ 0.24 eV) has shown a noticeable blue shift with increasing forward bias. Based on the investigations, a conclusion about the existence of a type-II staggered heterojunction at the InAs0.84Sb0.16/InAs0.32Sb0.28P0.40 heterointerface has been drawn, which is confirmed by the calculated energy band diagram.

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Authors and Affiliations

  1. Ioffe Institute, St. Petersburg, 194021, Russia

    V. V. Romanov, E. V. Ivanov & K. D. Moiseev

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  1. V. V. Romanov
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  2. E. V. Ivanov
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  3. K. D. Moiseev
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Correspondence to K. D. Moiseev.

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Translated by E. Bondareva

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Romanov, V.V., Ivanov, E.V. & Moiseev, K.D. Forming a Type-II Heterojunction in the InAsSb/InAsSbP Semiconductor Structure. Phys. Solid State 62, 2039–2044 (2020). https://doi.org/10.1134/S1063783420110244

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