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The Influence of the Skin Effect and Active Loss on the Intensity of EPR Lines in Semiconductor Materials

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Abstract

The influence of the skin effect and active loss in a semiconductor composite with a wide range of the values of the conductivity on the intensity of EPR absorption lines has been studied. An approach that enables one to obtain adequate agreement of the calculated and experimental results has been proposed. The absorption line intensity corresponding to the unit volume is shown can decrease by several times as the sample volume increases in the dependence on the conductivity of a material under study.

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Funding

This work was supported by the Russian Foundation for Basic Research and the Government of the Republic of Mordoviya, project no. 18-48-130015 r_a.

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Authors and Affiliations

  1. Ogarev Mordovian State University, 430005, Saransk, Russia

    A. M. Zyuzin, A. A. Karpeev & N. V. Yantsen

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  1. A. M. Zyuzin
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  2. A. A. Karpeev
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  3. N. V. Yantsen
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Correspondence to A. M. Zyuzin.

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The authors declare that they have no conflicts of interest.

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Translated by Yu. Ryzhkov

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Zyuzin, A.M., Karpeev, A.A. & Yantsen, N.V. The Influence of the Skin Effect and Active Loss on the Intensity of EPR Lines in Semiconductor Materials. Phys. Solid State 62, 291–296 (2020). https://doi.org/10.1134/S1063783420020225

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