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Photoconductivities of Nanocrystalline Vanadium Pentoxide Thin Film Grown by Plasma RF Magnetron Sputtering at Different Conditions of Deposition

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Abstract

In this study, the fabrication and characterization of a metal–semiconductor–metal (MSM) visible photodetector based on V2O5 were investigated. The V2O5 thin film was synthesized on n-type Si (100) as substrate by plasma RF-sputtering. The photoconductivity of the nanocrystalline vanadium pentoxide (V2O5|Si) was investigated at the different conditions of deposition (i.e., RF-sputtering power, pressure, and substrate temperature). The photoconductivity measurement of this work was performed in the darkness and under illumination, with applied voltage from a range of 0.1–10 V and illumination intensity 9.8 mW/cm2. I‒V characteristics under illumination showed that the films prepared from on the basis of n-Si have good efficiency and the best is at power 150 W, pressure 0.03 Torr, and temperature 473 K. The fabricated photoconductive detector showed the spectral response (Rλ) value of 0.0783 A W–1, quantum efficiency 18.04%, spectral detectivity D* = 6.984 × 109 cm Hz1/2 W–1 at wavelength 600 nm, and low spectral responsivity in the UV region.

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Authors and Affiliations

  1. Center of Applied Physics, Directorate of Materials Research, Ministry of Science and Technology, Baghdad, Iraq

    M. K. Khalaf & A. I. Khudiar

  2. Department of Physics, College of Education for Pure Science, University of Tikrit, Baghdad, Iraq

    N. K. Hassan & I. K. Salman

Authors
  1. M. K. Khalaf
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  2. N. K. Hassan
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  3. A. I. Khudiar
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  4. I. K. Salman
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Correspondence to A. I. Khudiar.

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Khalaf, M.K., Hassan, N.K., Khudiar, A.I. et al. Photoconductivities of Nanocrystalline Vanadium Pentoxide Thin Film Grown by Plasma RF Magnetron Sputtering at Different Conditions of Deposition. Phys. Solid State 62, 74–82 (2020). https://doi.org/10.1134/S1063783420010175

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  • DOI: https://doi.org/10.1134/S1063783420010175

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