Abstract
Transmission electron microscopy was used to study the interaction of a + c and a dislocations in a thick (14 μm) semipolar GaN layer grown by hydride vapor phase epitaxy on a 3C-SiC/Si(001) template. It is shown that the propagation of a dislocation half-loop with a Burgers vector b = \(\frac{1}{3}\left\langle {1\bar {2}10} \right\rangle \) during cooling can be blocked due to its reaction with a threading dislocation with a Burgers vector b = \(\frac{1}{3}\left\langle {\bar {1}2\bar {1}3} \right\rangle \) with the formation of a dislocation segment with a Burgers vector b = 〈0001〉. The gain in energy of the system as a result of such reaction is theoretically estimated. Within the approximation of dislocation linear tension, this gain is ~7.6 eV/Å, which gives ~45.6 keV for new dislocation segment with a length of ~600 nm. The contribution of the energy of the dislocation core is estimated as ~19.1 keV.
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ACKNOWLEDGMENTS
TEM studies were carried out using the equipment of the Federal State-Funded Scientific Center “Materials Science and Diagnostics in Advanced Technologies,” supported by the Ministry of Education and Science of the Russian Federation (unique project identifier RFMEFI62117X0018).
Funding
M.Yu. Gutkin is grateful to the Ministry of Education and Science of the Russian Federation for supporting the theoretical part of the work (project no. 3.3194.2017/4.6). A.V. Myasoedov is grateful to the Council on Grants of the President of the Russian Federation for support (project no. SP-3391.2019.1). The studies of S.A. Kukushkin, who has synthesized the samples of SiC layers on Si(001), are supported by the Russian Science Foundation (project no. 19-72-30004).
The study was supported by the Ministry of Higher Education and Science of the Russian Federation as part of the work on the state assignment of the Ioffe Institute in terms of characterization of objects.
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Sorokin, L.M., Gutkin, M.Y., Myasoedov, A.V. et al. Dislocation Reactions in a Semipolar Gallium Nitride Layer Grown on a Vicinal Si(001) Substrate Using Aluminum Nitride and 3C–SiC Buffer Layers. Phys. Solid State 61, 2316–2320 (2019). https://doi.org/10.1134/S1063783419120527
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DOI: https://doi.org/10.1134/S1063783419120527