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GaN Selective Epitaxy in Sub-Micron Windows with Different Depths Formed by Ion Beam Nanolithography

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Abstract

A significant difference in the growth mechanism of spatially closed structures of gallium nitride during selective growth in submicron windows with and without penetration into the GaN sublayer was demonstrated. The mechanisms of generation and development of dislocations, their role in the formation of self-organizing coaxial structures were modeled.

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REFERENCES

  1. M. I. Mitrofanov, S. N. Rodin, I. V. Levitskii, S. I. Troshkov, A. V. Sakharov, W. V. Lundin, and V. P. Evtikhiev, J. Phys.: Conf. Ser. 816, 012009 (2017).

    Google Scholar 

  2. P. Vennegues, B. Beaumont, V. Bousquet, M. Vaille, and P. Gibart, J. Appl. Phys. 87, 4175 (2000).

    Article  ADS  Google Scholar 

  3. W. V. Lundin, A. F. Tsatsulnikov, S. N. Rodin, A. V. Sakharov, S. O. Usov, M. I. Mitrofanov, I. V. Levitskii, and V. P. Evtikhiev, Semiconductors 52, 1357 (2018).

    Article  ADS  Google Scholar 

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Authors and Affiliations

  1. Ioffe Institute, St. Petersburg, Russia

    S. N. Rodin, W. V. Lundin, A. V. Sakharov, M. I. Mitrofanov, I. V. Levitskii & V. P. Evtikhiev

  2. Research and Engineering Center on Submicron Heterostructures for Microelectronics, Russian Academy of Sciences, St. Petersburg, Russia

    A. F. Tsatsulnikov & S. O. Usov

  3. ITMO University, St. Petersburg, Russia

    M. A. Kaliteevski

Authors
  1. S. N. Rodin
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  2. W. V. Lundin
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  3. A. F. Tsatsulnikov
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  4. A. V. Sakharov
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  5. S. O. Usov
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  6. M. I. Mitrofanov
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  7. I. V. Levitskii
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  8. V. P. Evtikhiev
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  9. M. A. Kaliteevski
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Corresponding author

Correspondence to S. N. Rodin.

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CONFLICT OF INTEREST

Authors declare no conflict of interest.

FINANCIAL SUPPORT

In detail of measurement, this work was supported by the Ministry of Education and Science of the Russian Federation (project no. 3.3194.2017/4.6).

In terms of epitaxial growth studies this work was supported by the Russian Foundation for Basic Research (project no. 17-02-01099-a).

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Rodin, S.N., Lundin, W.V., Tsatsulnikov, A.F. et al. GaN Selective Epitaxy in Sub-Micron Windows with Different Depths Formed by Ion Beam Nanolithography. Phys. Solid State 61, 2335–2337 (2019). https://doi.org/10.1134/S106378341912045X

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  • DOI: https://doi.org/10.1134/S106378341912045X

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