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Effect of Elastic Stresses on the Formation of Axial Heterojunctions in Ternary AIIIBV Nanowires

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Abstract

The effect of elastic stresses on the formation of axial heterojunctions in ternary AIIIBV nanowires has been studied theoretically. The composition profile of the axial InAs/GaAs heterojunction in self-catalytic GaxIn1-xAs nanowires have been obtained. The InAs/GaAs heterojunction width is shown to be several dozen of monolayers and it increases with an increase in the nanowire radius due to elastic stresses. The el-astic stress relaxation on the lateral surfaces of the nanowires at typical growth temperature (about 450°C) and a nanowire radius higher than 5 nm does not lead to the formation of an miscibility gap in the GaxIn1 ‒ xAs system.

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Funding

This work was supported by the Russian Foundation for Basic Research, project no. 18-32-00559.

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Authors and Affiliations

  1. St. Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia

    A. A. Koryakin

  2. St. Petersburg National Research University of Information Technologies, Mechanics and Optics, St. Petersburg, Russia

    A. A. Koryakin, E. D. Leshchenko & V. G. Dubrovskii

  3. Solid State Physics and NanoLund, Lund University, Box 118, S-22100, Lund, Sweden

    E. D. Leshchenko

Authors
  1. A. A. Koryakin
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  2. E. D. Leshchenko
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  3. V. G. Dubrovskii
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Correspondence to A. A. Koryakin.

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Translated by Yu. Ryzhkov

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Koryakin, A.A., Leshchenko, E.D. & Dubrovskii, V.G. Effect of Elastic Stresses on the Formation of Axial Heterojunctions in Ternary AIIIBV Nanowires. Phys. Solid State 61, 2459–2463 (2019). https://doi.org/10.1134/S1063783419120230

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