Abstract
We have studied the structure of epitaxial graphene obtained as a result of thermal desorption of the silicon carbide surface under conditions of vacuum synthesis and in Ar medium by reflection electron diffraction. As a result of the study, a significantly more uniform buffer layer coating of the SiC surface by epitaxial graphene has been found when forming in inert medium on the surface of 4H- and 6H-SiC(0001) polytypes compared with the synthesis of graphene in high vacuum. The quality of the coating has been shown to depend on the degree of perfection of the original single crystal.
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ACKNOWLEDGMENTS
The authors are grateful to the staff of the Department of Analytical Chemistry of the St. Petersburg State Technological Institute, namely V.P. Rubets and V.V. Antipov for the opportunity to carry out research using an EMR-100 electronograph.
Funding
This work was supported by the Ministry of Science and Education of the Russian Federation (agreement no. 14.575.21.0148, project no. RFMEFI57517X0148).
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Translated by G. Dedkov
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Kotousova, I.S., Lebedev, S.P., Lebedev, A.A. et al. Electron Diffraction Study of Epitaxial Graphene Structure Grown upon SiC (0001) Thermal Destruction in Ar Atmosphere and in High Vacuum. Phys. Solid State 61, 1940–1946 (2019). https://doi.org/10.1134/S1063783419100226
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DOI: https://doi.org/10.1134/S1063783419100226