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The Field Effect in a Metal–Ferroelectric–Semiconductor System of Multilayer Ferroelectric Films with Various Structure Types

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Abstract

The ability to grow the interfacial defect-poor Sr0.5Ba0.5Nb2O6 + Ba0.2Sr0.8TiO3 and Ba0.8Sr0.2TiO3 + Ba0.4Sr0.6TiO3 ferroelectric films onto the doped silicon substrates is discussed. A study of piezo-response via the quasi-static method (using the electrode area of 0.07 mm2) reveals that heterostructures possess an initial polarized ferroelectric state with a spontaneous polarization vector perpendicular to the substrate at any type of Si conductivity. The polarized state is established to refer to two-dimension stresses in the ferroelectric, which is tunable through a preprepared BaxSr1 – xTiO3 onto a sublayer substrate as well as to a thickness of this sublayer. Polarization switching in Sr0.5Ba0.5Nb2O6/Si and Ba0.8Sr0.2TiO3/Si heterostructures under the external field arises at only using the barium–strontium titanate sublayer predeposited onto silicon. A 15% decrease in switching polarization in Ba0.8Sr0.2TiO3/Ba0.4Sr0.6TiO3/Si structures is observed after 500 h.

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References

  1. Y. Qi and A. M. Rappe, Phys. Rev. Appl. 4, 044014 (2015).

    Article  ADS  Google Scholar 

  2. C.-B. Eom and S. Trolier-McKinstry, MRS Bull. 37, 1007 (2012).

    Article  Google Scholar 

  3. M. D. McDaniel, T. Q. Ngo, S. Hu, A. Posadas, and A. A. Demkov, Appl. Phys. Rev. 2, 041301 (2015).

    Article  ADS  Google Scholar 

  4. L. Mazet, S. M. Yang, S. V. Kalinin, S. Schamm-Chardon, and C. Dubourdieu, Sci. Technol. Adv. Mater. 16, 036005 (2015).

    Article  Google Scholar 

  5. V. M. Mukhortov, Yu. I. Golovko, S. V. Biryukov, A. Anokhin, and Yu. I. Yuzyuk, Tech. Phys. 61, 91 (2016).

    Article  Google Scholar 

  6. R. A. McKee, F. J. Walker, and M. F. Chisholm, Phys. Rev. Lett. 81, 3014 (1998).

    Article  ADS  Google Scholar 

  7. G. Niu, S. Yin, G. Saint-Girons, B. Gautier, P. Lecoeur, and V. Pillard, Microelectron. Eng. 88, 1232 (2011).

    Article  Google Scholar 

  8. S.-H. Baek and C.-B. Eom, Acta Mater. 61, 2734 (2013).

    Article  Google Scholar 

  9. Z. Yu, J. Ramdani, J. A. Curless, C. D. Overgaard, J. M. Finder, R. Droopad, K. W. Eisenbeiser, J. A. Hallmark, and W. J. Ooms, J. Vac. Sci. Technol. B 18, 2139 (2000).

    Article  Google Scholar 

  10. V. Vaithyanathan, J. Lettieri, W. Tian, A. Sharan, A. Vasudevarao, and Y. L. Li, J. Appl. Phys. 100, 024108 (2006).

    Article  ADS  Google Scholar 

  11. A. M. Prokhorov and Yu. S. Kuz’minov, Ferroelectric Crystals for Laser Radiation Control (Nauka, Moscow, 1982; Adam Hilger, Bristol, 1990).

    Google Scholar 

  12. V. M. Mukhortov and Yu. I. Yuzyuk, Heterostructures Based on Nanosized Ferroelectric Films: Production, Properties and Application (YuNTs RAN, Rostov-on-Don, 2008) [in Russian].

    Google Scholar 

  13. V. M. Mukhortov, V. V. Kolesnikov, Yu. I. Golovko, A. I. Mashchenko, and S. V. Biryukov, Tech. Phys. 50, 1089 (2005).

    Article  Google Scholar 

  14. S. V. Biryukov, Yu. I. Golovko, S. I. Masychev, V. M. Mukhortov, and A. P. Shelepo, Tech. Phys. 54, 1176 (2009).

    Article  Google Scholar 

  15. M. Molotskii, Y. Rosenwaks, and G. Rosenman, Ann. Rev. Mater. Res. 37, 271 (2007).

    Article  ADS  Google Scholar 

Download references

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Authors and Affiliations

  1. Southern Scientific Centre, Russian Academy of Science, Rostov-on-Don, Russia

    V. M. Mukhortov, Yu. I. Golovko, A. V. Pavlenko, D. V. Stryukov, S. V. Biryukov, A. P. Kovtun & S. P. Zinchenko

Authors
  1. V. M. Mukhortov
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  2. Yu. I. Golovko
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  3. A. V. Pavlenko
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  4. D. V. Stryukov
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  5. S. V. Biryukov
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  6. A. P. Kovtun
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  7. S. P. Zinchenko
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Corresponding author

Correspondence to V. M. Mukhortov.

Additional information

Original Russian Text © V.M. Mukhortov, Yu.I. Golovko, A.V. Pavlenko, D.V. Stryukov, S.V. Biryukov, A.P. Kovtun, S.P. Zinchenko, 2018, published in Fizika Tverdogo Tela, 2018, Vol. 60, No. 9, pp. 1741–1747.

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Mukhortov, V.M., Golovko, Y.I., Pavlenko, A.V. et al. The Field Effect in a Metal–Ferroelectric–Semiconductor System of Multilayer Ferroelectric Films with Various Structure Types. Phys. Solid State 60, 1786–1792 (2018). https://doi.org/10.1134/S1063783418090202

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  • DOI: https://doi.org/10.1134/S1063783418090202

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