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Structure and Properties of SiO x Films Prepared by Chemical Etching of Amorphous Alloy Ribbons

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Abstract

The structure and the physical properties of amorphous SiO x films prepared by chemical etching of an iron-based amorphous ribbon alloy have been studied. The neutron diffraction and also the atomicforce and electron microscopy show that the prepared visually transparent films have amorphous structure, exhibit dielectric properties, and their morphology is similar to that of opals. The samples have been studied by differential scanning calorimetry, Raman and IR spectroscopy before and after their heat treatment. It is found that annealing of the films in air at a temperature of 1273 K leads to a change in their chemical compositions: an amorphous SiO2 compound with inclusions of SiO2 nanocrystals (crystobalite) forms.

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Correspondence to A. D. Berezner.

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Original Russian Text © V.A. Fedorov, A.D. Berezner, A.I. Beskrovnyi, T.N. Fursova, A.V. Pavlikov, A.V. Bazhenov, 2018, published in Fizika Tverdogo Tela, 2018, Vol. 60, No. 4, pp. 701–705.

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Fedorov, V.A., Berezner, A.D., Beskrovnyi, A.I. et al. Structure and Properties of SiO x Films Prepared by Chemical Etching of Amorphous Alloy Ribbons. Phys. Solid State 60, 705–709 (2018). https://doi.org/10.1134/S1063783418040091

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  • DOI: https://doi.org/10.1134/S1063783418040091

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