Abstract
An improved parameter-free method of joint Argand diagrams was used to expand the permittivity spectrum of gallium arsenide in a region of 19–26 eV into 12 bands of optical transitions with determining their maximum and half-width energies, as well as the oscillator strengths. The values of oscillator strengths of the obtained bands lie within an interval from 0.0009 to 0.06. In the regions of 19.2–21.3 and 24–26 eV, the permittivity spectrum was preliminarily calculated on the basis of experimental reflectance spectra with the use of the Kramers–Kronig integral relation method. The nature of the obtained transition bands is suggested in terms of the band-to-band and exciton transitions.
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References
C. Hilsum, Semicond. Sci. Technol. 28, 015028 (2013).
V. I. Stafeev, Semiconductors 44, 551 (2010).
I. Akasaki, Rev. Mod. Phys. 87, 1119 (2015).
F. Bechstedt, Many-Body Approach to Electronic Excitations. Concepts and Applications (Springer, Berlin, 2015).
V. V. Sobolev, Optical Properties and Electron Structure of Non-Metals, Vol. 1: Introduction to the Theory (Inst. Komp’yut. Issled., Moscow, Izhevsk, 2012) [in Russian].
P. Yu and M. Cardona, Fundamentals of Semiconductor Physics (Springer, New York, 1996; Fizmatlit, Moscow, 2002).
H. R. Philipp and H. Ehrenreich, Phys. Rev. 129, 1550 (1963).
U. Buchner, Phys. Status Solidi B 81, 227 (1977).
V. V. Sobolev, E. A. Antonov, and V. Val. Sobolev, Semiconductors 44, 1170 (2010).
A. A. Lanin and A. M. Zheltikov, JETP Lett. 104, 449 (2016).
V. V. Sobolev, D. A. Merzlyakov, and V. Val. Sobolev, J. Appl. Spectrosc. 83, 573 (2016).
W. Gudat, E. E. Koch, P. Y. Yu, M. Cardona, and C. M. Penchina, Phys. Status Solidi B 52, 505 (1972).
D. E. Aspnes, M. Cardona, V. Saile, M. Skibowski, and G. Sprussel, Solid State Commun. 31, 99 (1979).
M. Skibowski, G. Sprussel, and V. Saile, Appl. Opt. 19, 3978 (1980).
J. Barth, R. L. Johnson, M. Cardona, D. Fuchs, and A.M. Bradshaw, in Proc. of the 19th International Con-ference on Physics of Semiconductors (Polish Acad. Sci., Warsaw, 1988), Vol. 2, p. 885.
O. Gunther, C. Janowitz, G. Jungk, B. Jenichen, R. Hey, L. Daweritz, and K. Ploog, Phys. Rev. B 52, 2599 (1995).
M. Rakel, C. Cobet, N. Esser, F. Fuchs, F. Bechstedt, R. Goldhahn, W. G. Schmidt, and W. Schaff, Phys. Rev. B 77, 115120 (2008).
P. Gori, M. Rakel, C. Cobet, W. Richter, N. Esser, A. Hoffmann, R. D. Sole, A. Cricenti, and O. Pulci, Phys. Rev. B 81, 125207 (2010).
K. Dorywalski, B. Andriyevsky, M. Piasecki, N. Lemee, A. Patryn, C. Cobet, and N. Esser, J. Appl. Phys. 114, 043513 (2013).
S. Adachi, Phys. Rev. B 35, 7454 (1987).
A. V. Bakulin and S. E. Kulkova, Russ. Phys. J. 57, 996 (2014).
B. D. Malone and M. L. Cohen, J. Phys.: Condens. Matter 25, 105503 (2013).
M. Grüning, D. Sangalli, and C. Attaccalite, Phys. Rev. B 94, 035149 (2016).
V. D. Dymnikov, Phys. Solid State 43, 2037 (2001).
A. Said, M. Debbichi, and M. Said, Optik 127, 9212 (2016).
P. Thiry, Y. Petroff, R. Pinchaux, J. R. Chelikowsky, and M. L. Cohen, Solid State Commun. 20, 1107 (1976).
V. V. Sobolev and V. V. Nemoshkalenko, Methods of Computational Physics in Solid State Theory. Electronic Structure of Semiconductors (Naukova Dumka, Kiev, 1988) [in Russian].
V. V. Sobolev, V. Val. Sobolev, and D. V. Anisimov, Phys. Solid State 57, 2489 (2015).
V. V. Sobolev, Optical Properties and Electronic Structure of Monocarbon Media (Udmurtsk. Gos. Univ., Izhevsk, 2016), Vol. 1 [in Russian].
V. V. Sobolev. Optical Properties and Electronic Structure of Monocarbon Media (Udmurtsk. Gos. Univ., Izhevsk, 2016), Vol. 2 [in Russian].
V. V. Sobolev, Optical Properties and Electron Structure of Non-Metals (Inst. Komp’yut. Issled., Moscow, Izhevsk, 2012), Vol. 2 [in Russian].
R. O. Jones, Rev. Mod. Phys. 87, 897 (2015).
J. P. Perdew, A. Ruzsinszky, G. I. Csonka, O. A. Vydrov, G. E. Scuseria, L. A. Constantin, X. Zhou, and K. Burke, Phys. Rev. Lett. 100, 136406 (2008).
A. Gulans, S. Kontur, Ch. Meisenbichler, D. Nabok, P. Pavone, S. Rigamonti, S. Sagmeister, U. Werner, and C. Draxl, J. Phys.: Condens. Matter 26, 363202 (2014).
J. Wang, Y. Zhang, and L.-W. Wang, Phys. Rev. B 92, 045211 (2015).
A. Cakan, C. Sevik, and C. Bulutay, J. Phys. D: Appl. Phys. 49, 085104 (2016).
C. S. Wang and B. M. Klein, Phys. Rev. B 24, 3417 (1981).
N. N. Anua, R. Ahmed, A. Shaari, M. A. Saeed, B. U. Haq, and S. Goumri-Said, Semicond. Sci. Technol. 28, 105015 (2013).
S. Sharma, J. K. Dewhurst, and C. Ambrosch-Draxl, Phys. Rev. Lett. 95, 136402 (2005).
V. V. Sobolev and D. A. Perevoshchikov, Semiconductors 49, 570 (2015).
I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, J. Appl. Phys. 89, 5815 (2001).
N. J. Shevchik, J. Tejeda, and M. Cardona, Phys. Rev. B 9, 2627 (1974).
T. Miller and T.-C. Chiang, Phys. Rev. B 29, 7034 (1984).
S. L. Richardson, M. L. Cohen, S. G. Louie, and J. R. Chelikowsky, Phys. Rev. B 33, 1177 (1986).
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Original Russian Text © D.A. Perevoshchikov, V.V. Sobolev, 2018, published in Fizika Tverdogo Tela, 2018, Vol. 60, No. 3, pp. 476–481.
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Perevoshchikov, D.A., Sobolev, V.V. Optical Transitions from Core d Levels of Gallium Arsenide. Phys. Solid State 60, 481–486 (2018). https://doi.org/10.1134/S1063783418030241
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DOI: https://doi.org/10.1134/S1063783418030241