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Confinement effect on hole polarization in (Ga,Mn)As/AlAs diluted magnetic semiconductor multiple quantum wells

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Abstract

The influence of quantum confinement on the spin polarization of holes in ferromagnetic multiple quantum wells based on (Ga,Mn)As diluted magnetic semiconductor has been investigated. It is shown that the spin polarization of holes in the impurity band is more likely determined by the magnetic properties of GaMnAs rather than the quantum-confinement effect. The model of Mn acceptor in a QW, describing the polarization characteristics of photoluminescence in GaAs: Mn/AlAs QWs, has been developed. Experimental data and theoretical analysis show that the spin polarization of holes in (Ga, Mn)As/AlAs QWs can be explained within a model, which suggests that holes are localized in the impurity band.

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Authors and Affiliations

  1. Ioffe Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    G. S. Dimitriev, V. F. Sapega, N. S. Averkiev & I. E. Panaiotti

  2. Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany

    K. H. Ploog

Authors
  1. G. S. Dimitriev
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  2. V. F. Sapega
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  3. N. S. Averkiev
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  4. I. E. Panaiotti
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  5. K. H. Ploog
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Correspondence to G. S. Dimitriev.

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Original Russian Text © G.S. Dimitriev, V.F. Sapega, N.S. Averkiev, I.E. Panaiotti, K.H. Ploog, 2017, published in Fizika Tverdogo Tela, 2017, Vol. 59, No. 11, pp. 2240–2245.

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Dimitriev, G.S., Sapega, V.F., Averkiev, N.S. et al. Confinement effect on hole polarization in (Ga,Mn)As/AlAs diluted magnetic semiconductor multiple quantum wells. Phys. Solid State 59, 2262–2267 (2017). https://doi.org/10.1134/S1063783417110063

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