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State equations and properties of various polymorphous modifications of silicon and germanium

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Abstract

The state equations and the pressure dependences of the lattice properties have been obtained for various polymorphous modifications of silicon and germanium using the Mie–Lennard-Jones pair interatomic potential and the Einstein crystal model. It is shown that the elastic-type interatomic potential gives the best results for the semiconductor phase and the plastic-type interatomic potential for the metalized phases whose potential well depth is significantly smaller. The pressure dependences of the lattice properties are calculated along isotherm 300 K and the jumps of the properties during the phase transition from the diamond structure to the β-Sn phase are evaluated for both silicon and germanium. The calculated results agree well with the experimental data.

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Authors and Affiliations

  1. Institute for Geothermal Problems, Dagestan Scientific Center, Russian Academy of Sciences, pr. Shamilya 39a, Makhachkala, 367030, Dagestan, Russia

    M. N. Magomedov

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  1. M. N. Magomedov
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Correspondence to M. N. Magomedov.

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Original Russian Text © M.N. Magomedov, 2017, published in Fizika Tverdogo Tela, 2017, Vol. 59, No. 6, pp. 1065–1072.

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Magomedov, M.N. State equations and properties of various polymorphous modifications of silicon and germanium. Phys. Solid State 59, 1085–1093 (2017). https://doi.org/10.1134/S1063783417060142

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