Structural heteroepitaxy during topochemical transformation of silicon to silicon carbide
- 30 Downloads
Silicon carbide samples synthesized from silicon by topochemical substitution of atoms are studied by the ion channeling method. The results of the analysis unambiguously demonstrate the occurrence of structural heteroepitaxy. The lattice of synthesized silicon carbide of hexagonal polytype 6H is epitaxially matched in the 〈0001〉 direction with the lattice grating grid array network of an initial substrate silicon in the 〈111〉 direction. The main features of structural self-coupling matching in this epitaxial heterocomposite are revealed. Despite the very large silicon carbide and silicon lattice parameter mismatch, the misfit dislocation density at the interface is low, which is a feature of the topochemical substitution method leading to comparable structures.
Unable to display preview. Download preview PDF.
- 1.L. C. Feldman, J. W. Mayer, and S. T. Picraux, Material Analysis by Ion Channeling (Academic, New York, 1982).Google Scholar
- 2.E. T. Shipatov, Ion Channeling (Rostov State Univ., Rostov-on-Don, 1986) [in Russian].Google Scholar
- 3.High-Energy Ion Beam Analysis of Solids, Ed. by G. Gotz and K. Gartner (Academic, Berlin, 1988).Google Scholar
- 4.V. K. Egorov, E. V. Egorov, and Yu. M. Mironov, in Proceedings of the 20th International Scientific and Technical Conference “High Technologies in Russian Industry” (Bauman Moscow State Technical University, Moscow, 2015), p. 178.Google Scholar
- 5.V. K. Egorov, E. V. Egorov, and M. S. Afanas’ev, Nanoinzheneriya, No. 11, 38 (2012).Google Scholar
- 14.J. R. Bird and J. S. Williams, Ion Beams for Material Analysis (Academic, Sidney, 1989).Google Scholar