Abstract
The potential to grow filamentary GaN nanocrystals by molecular beam epitaxy on a silicon substrate with a nanosized buffer layer of silicon carbide has been demonstrated. Morphological and optical properties of the obtained system have been studied. It has been shown that the intensity of the photoluminescence spectrum peak of such structures is higher than that of the best filamentary GaN nanocrystals without the buffer silicon carbide layer by a factor of more than two.
Similar content being viewed by others
References
S. J. Pearton and F. Ren, Adv. Mater. (Weinheim) 12, 1571 (2000).
S. Nakamura and G. Fasol, The Blue Laser Diode: GaN-Based Light Emitters and Lasers (Springer-Verlag, New York, 1997).
Ioffe data archive. http://www.ioffe.ru/SVA/NSM.
R. N. Kyutt, Tech. Phys. Lett. 36 (8), 690 (2010).
I. G. Aksyanov, V. N. Bessolov, Yu. V. Zhilyaev, M. E. Koman, E. V. Konenkova, S. A. Kukushkin, A. V. Osipov, S. N. Rodin, N. A. Feoktistov, Sh. Sharofidinov, and M. P. Shcheglov, Tech. Phys. Lett. 34 (6), 479 (2008).
R. A. Oliver, M. J. Kappers, and C. McAleese, J. Mater. Sci.: Mater. Electron. 19, 208 (2008).
D. Cherns, W. T. Young, M. A. Saunders, F. A. Ponce, and S. Nakamura, Microsc. Semicond. Mater. 157, 187 (1997).
S. J. Rosner, S. E. Carr, M. J. Ludowise, G. Girolami, and H. I. Erikson, Appl. Phys. Lett. 70, 420 (1997).
L. P. Sigiura, J. Appl. Phys. 81, 1633 (1997).
S. A. Kukushkin and A. V. Osipov, Phys. Solid State 50 (7), 1238 (2008).
V. G. Dubrovskii, G. E. Cirlin, and V. M. Ustinov, Semiconductors 43 (12), 1539 (2009).
Z. Zhong, F. Qian, D. Wang, and C. M. Lieber, Nano Lett. 3, 343 (2003).
H. J. Choi, J. C. Johnson, and R. He, J. Phys. Chem. B 107, 8721 (2003).
S. A. Kukushkin, A. V. Osipov, and N. A. Feoktistov, Phys. Solid State 56 (8), 1507 (2014).
S. A. Kukushkin and A. V. Osipov, J. Phys. D: Appl. Phys. 47, 313001 (2014).
M. Tchernycheva, C. Sartel, G. E. Cirlin, L. Travers, G. Patriarche, J-C. Harmand, Le Si Dang, J. Renard, B. Gayral, L. Nevou, and F. Julien, Nanotechnology 18, 385306 (2007).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © R.R. Reznik, K.P. Kotlyar, I.V. Il’kiv, I.P. Soshnikov, S.A. Kukushkin, A.V. Osipov, E.V. Nikitina, G.E. Cirlin, 2016, published in Fizika Tverdogo Tela, 2016, Vol. 58, No. 10, pp. 1886–1889.
Rights and permissions
About this article
Cite this article
Reznik, R.R., Kotlyar, K.P., Il’kiv, I.V. et al. Growth and optical properties of filamentary GaN nanocrystals grown on a hybrid SiC/Si(111) substrate by molecular beam epitaxy. Phys. Solid State 58, 1952–1955 (2016). https://doi.org/10.1134/S1063783416100292
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063783416100292