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Field-effect transistor structures on the basis of poly(3-hexylthiophene), fullerene derivatives [60]PCBM, [70]PCBM, and nickel nanoparticles

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Abstract

Organic field-effect transistor (OFET) structures with the active layers on the basis of composite films of semiconductor polymer poly(3-hexylthiophene) (P3HT), fullerene derivatives [60]PCBM, [70]PCBM, and nickel (Ni) nanoparticles are obtained, and their optical, electrical, and photoelectrical properties are studied. It is shown that introducing Ni nanoparticles into P3HT: [60]PCBM and P3HT: [70]PCBM films leads to an increase in the absorption and to quenching of photoluminescence of the composite in the 400–600 nm spectral band due to the plasmon effect. In P3HT: [60]PCBM: Ni and P3HT: [70]PCBM: Ni OFET structures at the P3HT: [60]PCBM and P3HT: [70]PCBM concentrations of ~1: 1 and Ni concentrations of ~3–5 wt %, current–voltage (I–V) characteristics typical of ambipolar OFETs with the dominant hole conduction are observed. The charge-carrier (hole) mobilities calculated from the I–V characteristic at V G =–10 V were found to be ~0.46 cm2/(V s) for P3HT: [60]PCBM: Ni and ~4.7 cm2/(V s) for P3HT: [70]PCBM: Ni, which means that the mobility increases if [60]PCBM in the composition is replaced with [70]PCBM. The effect of light on the I–V characteristics of P3HT: [60]PCBM: Ni and P3HT: [70]PCBM: Ni OFETs is studied.

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References

  1. T. A. Skotheim and J. R. Reynolds, Handbook of Conducting Polymers, 3rd ed. (CRC Press, New York, 2007), Vols. 1–2, p. 1949.

    Google Scholar 

  2. A. Hepp, H. Heil, W. Weise, M. Ahles, R. Schmechel, and H. von Seggern, Phys. Rev. Lett. 91, 157406 (2003).

    Article  ADS  Google Scholar 

  3. J. Zaumseil, R. H. Friend, and H. Sirringhaus, Nat. Mater. 5, 69 (2006).

    Article  ADS  Google Scholar 

  4. J. S. Swensen, C. Soci, and A. J. Heeger, Appl. Phys. Lett. 87, 253511 (2005).

    Article  ADS  Google Scholar 

  5. H. Kim, J. Y. Kim, S. H. Park, K. Lee, Y. Jin, J. Kim, and H. Suh, Appl. Phys. Lett. 86, 183502 (2005).

    Article  ADS  Google Scholar 

  6. E. J. Meijer, D. M. De Leeuw, S. Setayesh, E. V. Veenendaal, B.-H. Huisman, P. W. M. Blom, J. C. Hummelen, U. Scherf, and T. M. Klapwijk, Nat. Mater. 2, 678 (2003).

    Article  ADS  Google Scholar 

  7. W. Ma, C. Y. Yang, X. Gong, K. Lee, and A. J. Heeger, Adv. Funct. Mater. 15, 1617 (2005).

    Article  Google Scholar 

  8. I. Etxebarria, J. Ajuria, and R. Pacios, Org. Electron. 19, 34 (2015).

    Article  Google Scholar 

  9. C. J. Brabec, N. S. Saricitci, and J. C. Hummelen, Adv. Funct. Mater. 11, 15 (2001).

    Article  Google Scholar 

  10. E. von Hauff, J. Parisi, and V. Dyakonov, Thin Solid Films 511, 506 (2006).

    Article  ADS  Google Scholar 

  11. S. Cho, J. Yuen, J. Y. Kim, K. Lee, and A. J. Heeger, Appl. Phys. Lett. 89, 153505 (2006).

    Article  ADS  Google Scholar 

  12. S. Cho, S.-H. Nho, M. Eo, and M. H. Lee, Org. Electron. 15, 1002 (2014).

    Article  Google Scholar 

  13. C. C. D. Wang, W. C. H. Choy, C. Duan, D. D. S. Fung, W. E. I. Sha, F.-X. Xie, F. Huang, and Y. Cao, J. Mater. Chem. 22, 1206 (2012).

    Article  Google Scholar 

  14. Z. Liu, S. Y. Lee, and E.-C. Lee, Appl. Phys. Lett. 105, 223306 (2014).

    Article  ADS  Google Scholar 

  15. A. N. Aleshin, F. S. Fedichkin, and P. E. Gusakov, Phys. Solid State 53 (11), 2370 (2011).

    Article  ADS  Google Scholar 

  16. J.-Y. Cho, B. Domercq, S. C. Jones, J. Yu, X. Zhang, Z. An, M. Bishop, S. Barlow, S. R. Marder, and B. Kippelen, J. Mater. Chem. 17, 2642 (2007).

    Article  Google Scholar 

  17. A. N. Aleshin, I. P. Shcherbakov, and F. S. Fedichkin, Phys. Solid State 54 (8), 1693 (2012).

    Article  ADS  Google Scholar 

  18. W. E. I. Sha, W. C. H. Choy, Y. G. Liu, and W. C. Chew, Appl. Phys. Lett. 99, 113304 (2011).

    Article  ADS  Google Scholar 

  19. C. D. Dimitrakopoulos and P. R. L. Malenfant, Adv. Mater. (Weinheim) 14, 99 (2002).

    Article  Google Scholar 

  20. H. Sirringhaus, P. J. Brown, R. H. Friend, M. M. Nielsen, K. Bechgaard, B. M. W. Langeveld-Voss, A. J. H. Spiering, R. A. J. Janssen, E. W. Meijer, P.Herwig, and D. M. de Leeuw, Nature (London) 401, 685 (1999).

    Article  ADS  Google Scholar 

  21. K. A. Mohamad, A. Alias, I. Saad, B. K. Gosh, K. Uesugi, and H. Fukuda, J. Chem. Chem. Eng. 8, 476 (2014).

    Google Scholar 

  22. J. Y. Kim, K. Lee, N. E. Coates, W. L. Ma, D. Moses, and A. J. Heeger, Science (Washington) 317, 222 (2007).

    Article  ADS  Google Scholar 

  23. H. Sirringhaus, N. Tessler, and R. H. Friend, Science (Washington) 280, 1741 (1998).

    Article  ADS  Google Scholar 

  24. D. E. Markov, J. C. Hummelen, P. W. M. Blom, and A. B. Sieval, Phys. Rev. B: Condens. Matter 72, 045216 (2005).

    Article  ADS  Google Scholar 

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Authors and Affiliations

  1. Ioffe Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    A. N. Aleshin, I. P. Shcherbakov, I. N. Trapeznikova & V. N. Petrov

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  1. A. N. Aleshin
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  2. I. P. Shcherbakov
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  3. I. N. Trapeznikova
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  4. V. N. Petrov
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Correspondence to A. N. Aleshin.

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Original Russian Text © A.N. Aleshin, I.P. Shcherbakov, I.N. Trapeznikova, V.N. Petrov, 2016, published in Fizika Tverdogo Tela, 2016, Vol. 58, No. 9, pp. 1818–1825.

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Aleshin, A.N., Shcherbakov, I.P., Trapeznikova, I.N. et al. Field-effect transistor structures on the basis of poly(3-hexylthiophene), fullerene derivatives [60]PCBM, [70]PCBM, and nickel nanoparticles. Phys. Solid State 58, 1882–1890 (2016). https://doi.org/10.1134/S1063783416090043

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  • DOI: https://doi.org/10.1134/S1063783416090043

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