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Weak antilocalization in thin films of the Bi2Te2.7Se0.3 solid solution

  • Surface Physics and Thin Films
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Abstract

A technology has been developed for the preparation of thin films of the Bi2Te2.7Se0.3 solid solution through the thermal evaporation in a vacuum using the “hot-wall” method. The high quality of the thin films thus prepared has been confirmed by the X-ray diffraction and Raman scattering data. The electron transport has been investigated over wide ranges of temperatures (1.4–300 K) and magnetic fields (up to 8 T). It has been assumed that the observed weak antilocalization is associated with the dominant contribution from the surface states of a topological insulator. The dephasing length has been estimated.

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Authors and Affiliations

  1. Institute of Physics, Azerbaijan Academy of Sciences, pr. H. Javid 33, Baku, AZ1141, Azerbaijan

    N. A. Abdullaev, O. Z. Alekperov, Kh. V. Aligulieva, A. M. Kerimova & N. T. Mamedov

  2. Institute of Solid State Physics, Russian Academy of Sciences, ul. Akademika Ossipyana 2, Chernogolovka, Moscow oblast, 142432, Russia

    V. N. Zverev

Authors
  1. N. A. Abdullaev
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  2. O. Z. Alekperov
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  3. Kh. V. Aligulieva
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  4. V. N. Zverev
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  5. A. M. Kerimova
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  6. N. T. Mamedov
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Correspondence to N. A. Abdullaev.

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Original Russian Text © N.A. Abdullaev, O.Z. Alekperov, Kh.V. Aligulieva, V.N. Zverev, A.M. Kerimova, N.T. Mamedov, 2016, published in Fizika Tverdogo Tela, 2016, Vol. 58, No. 9, pp. 1806–1811.

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Abdullaev, N.A., Alekperov, O.Z., Aligulieva, K.V. et al. Weak antilocalization in thin films of the Bi2Te2.7Se0.3 solid solution. Phys. Solid State 58, 1870–1875 (2016). https://doi.org/10.1134/S106378341609002X

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  • DOI: https://doi.org/10.1134/S106378341609002X

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