Abstract
For the first time, zinc oxide epitaxial films on silicon were grown by the method of atomic layer deposition at a temperature T = 250°C. In order to avoid a chemical reaction between silicon and zinc oxide (at the growth temperature, the rate constant of the reaction is of the order of 1022), a high-quality silicon carbide buffer layer with a thickness of ~50 nm was preliminarily synthesized by the chemical substitution of atoms on the silicon surface. The zinc oxide films were grown on n- and p-type Si(100) wafers. The ellipsometric, Raman, electron diffraction, and trace element analyses showed that the ZnO films are epitaxial.
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Original Russian Text © S.A. Kukushkin, A.V. Osipov, A.I. Romanychev, 2016, published in Fizika Tverdogo Tela, 2016, Vol. 58, No. 7, pp. 1398–1402.
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Kukushkin, S.A., Osipov, A.V. & Romanychev, A.I. Epitaxial growth of zinc oxide by the method of atomic layer deposition on SiC/Si substrates. Phys. Solid State 58, 1448–1452 (2016). https://doi.org/10.1134/S1063783416070246
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DOI: https://doi.org/10.1134/S1063783416070246