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Surface morphological instability of silicon (100) crystals under microwave ion physical etching

  • Surface Physics and Thin Films
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Abstract

This paper presents the results of studies of the dynamics of relaxation modification of the morphological characteristics of atomically clean surfaces of silicon (100) crystals with different types of conductivity after microwave ion physical etching in an argon atmosphere. For the first time, the effect of the electronic properties on the morphological characteristics and the surface free energy of silicon crystals is experimentally shown and proven by physicochemical methods.

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Authors and Affiliations

  1. Saratov Branch, Kotel’nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Zelenaya ul. 38, Saratov, 410019, Russia

    R. K. Yafarov & V. Ya. Shanygin

Authors
  1. R. K. Yafarov
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  2. V. Ya. Shanygin
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Correspondence to R. K. Yafarov.

Additional information

Original Russian Text © R.K. Yafarov, V.Ya. Shanygin, 2016, published in Fizika Tverdogo Tela, 2016, Vol. 58, No. 2, pp. 350–353.

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Yafarov, R.K., Shanygin, V.Y. Surface morphological instability of silicon (100) crystals under microwave ion physical etching. Phys. Solid State 58, 360–363 (2016). https://doi.org/10.1134/S1063783416020347

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  • DOI: https://doi.org/10.1134/S1063783416020347

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