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Distribution of 28Si, 29Si, and 30Si isotopes under plastic deformation in subsurface layers of Si: B crystals

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Abstract

The redistribution of 28Si, 29Si, and 30Si isotopes in subsurface layers of Si: B single crystals after their plastic deformation has been revealed. It has been found that the distribution profile of 28Si and 29Si isotopes becomes smoother after deformation, whereas the 30Si isotope distribution remains unchanged. A change in the subsurface profile of the 29SiO oxide is observed, which indicates the migration of the 29Si isotope in the composition of oxygen complexes during plastic deformation.

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Authors and Affiliations

  1. Institute of Problems of Chemical Physics, Russian Academy of Sciences, ul. Akademika Semenova 1, Moscow oblast, Chernogolovka, 142432, Russia

    O. V. Koplak & R. B. Morgunov

  2. Taras Shevchenko National University of Kyiv, ul. Volodymyrska 64/13, Kyiv, 01601, Ukraine

    O. V. Koplak

  3. Kurdyumov Institute for Metal Physics, National Academy of Sciences, Vernadsky Blvd. 36, Kiev, 03680, Ukraine

    M. A. Vasil’ev

Authors
  1. O. V. Koplak
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  2. M. A. Vasil’ev
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  3. R. B. Morgunov
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Correspondence to R. B. Morgunov.

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Original Russian Text © O.V. Koplak, M.A. Vasil’ev, R.B. Morgunov, 2016, published in Fizika Tverdogo Tela, 2016, Vol. 58, No. 2, pp. 242–245.

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Koplak, O.V., Vasil’ev, M.A. & Morgunov, R.B. Distribution of 28Si, 29Si, and 30Si isotopes under plastic deformation in subsurface layers of Si: B crystals. Phys. Solid State 58, 247–250 (2016). https://doi.org/10.1134/S1063783416020165

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  • DOI: https://doi.org/10.1134/S1063783416020165

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