Abstract
This paper presents the results of the electron microscopic study of GaN/AlGaN/AlN/SiC/Si(111) structures grown by the metal-organic vapor phase epitaxy. A SiC epitaxial buffer nanolayer has been grown by a new method of substitution of atoms on the Si(111) substrate. It has been found that there is a strong dependence of the density of dislocations and V-defects on the synthesis conditions of SiC and the thickness of the AlN layer. It has been proved experimentally that the creation of a low-temperature AlN insert with a simultaneous decrease in the thickness of the AlN layer to values of no more than 50 nm makes it possible to almost completely prevent the formation of V-defects in the GaN layer. The density of screw and mixed dislocations in the GaN layer of the studied samples lies in the range from 5 × 109 to 1 × 1010 cm−2. A theoretical model of the formation of V-defects during the growth of GaN has been developed.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
S. A. Kukushkin and A. V. Osipov, J. Phys. D: Appl. Phys. 47, 313001 (2014).
S. A. Kukushkin, A. V. Osipov, and N. A. Feoktistov, Phys. Solid State 56 (8), 1507 (2014).
L. M. Sorokin, A. E. Kalmykov, V. N. Bessolov, N. A. Feoktistov, A. V. Osipov, S. A. Kukushkin, and N. V. Veselov, Tech. Phys. Lett. 37 (4), 326 (2011).
V. N. Bessolov, Yu. V. Zhilyaev, E. V. Konenkova, L. M. Sorokin, N. A. Feoktistov, Sh. Sharofidinov, M. P. Shcheglov, S. A. Kukushkin, L. I. Mets, and A. V. Osipov, Tech. Phys. Lett. 36 (6), 496 (2010).
S. A. Kukushkin, A. V. Osipov, S. G. Zhukov, E. E. Zavarin, V. V. Lundin, M. A. Sinitsyn, M. M. Rozhavskaya, A. F. Tsatsul’nikov, S. I. Troshkov, and N. A. Feoktistov, Tech. Phys. Lett. 38 (3), 297 (2012).
P. Gibart, Rep. Prog. Phys. 67, 667 (2004).
V. N. Bessolov, E. V. Konenkova, A. V. Zubkova, A. V. Osipov, T. A. Orlova, S. N. Rodin, and S. A. Kukushkin, Mater. Phys. Mech. 21 (3), 266 (2014).
K. Sangwal, Etching of Crystals: Theory, Experiment and Application (North-Holland, Amsterdam, 1987).
R. Zuo, H. Yu, N. Xu, and X. He, ECS J. Solid State Sci. Technol. 1 (1), P46 (2012).
A. Hirakoa, M. Yoshitania, M. Nishibayashia, Y. Nishikawab, and K. Ohkawa, J. Cryst. Growth 931, 237 (2002).
S. A. Kukushkin and A. V. Osipov, Phys.—Usp. 41 (10), 983 (1998).
A. A. Chernov, E. I. Givargizov, Kh. S. Bagdasarov, V. A. Kuznetsov, L. N. Dem’yanets, and A. N. Lobachev, Modern Crystallography, Vol. 3: Crystal Growth (Nauka, Moscow, 1980; Springer-Verlag, Berlin, 1984).
A. Kelly and G. Groves, Crystallography and Crystal Defects (Longman, Bristol, 1970).
M. Yu. Gutkin and I. A. Ovid’ko, Phys. Solid State 42 (11), 2000 (2000).
M. Yu. Gutkin and I. A. Ovid’ko, Physical Mechanics of Deformed Nanostructures (Yanus, St. Petersburg, 2005), Vol. 2 [in Russian].
V. I. Vladimirov and A. E. Romanov, Disclinations in Crystals (Nauka, Leningrad, 1986) [in Russian].
G. A. Malygin, Phys. Solid State 37 (8), 1248 (1995).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © S.A. Kukushkin, A.V. Osipov, M.M. Rozhavskaya, A.V. Myasoedov, S.I. Troshkov, V.V. Lundin, L.M. Sorokin, A.F. Tsatsul’nikov, 2015, published in Fizika Tverdogo Tela, 2015, Vol. 57, No. 9, pp. 1850–1858.
Rights and permissions
About this article
Cite this article
Kukushkin, S.A., Osipov, A.V., Rozhavskaya, M.M. et al. Growth and structure of GaN layers on silicon carbide synthesized on a Si substrate by the substitution of atoms: A model of the formation of V-defects during the growth of GaN. Phys. Solid State 57, 1899–1907 (2015). https://doi.org/10.1134/S1063783415090218
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063783415090218