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Low-frequency impedance in thin films near the metal-semiconductor phase transition

  • Surface Physics and Thin Films
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Abstract

The impedance of thin VO2 films at temperatures near the metal-semiconductor phase transition has been studied. It has been found that, in the low-temperature region, there is an abrupt change in the impedance. It has been demonstrated that the nature of this phenomenon is connected with thermoinertial processes in the film. From the experimental data, the heat conductivity of the film/substrate transition layer has been evaluated.

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Authors and Affiliations

  1. Ioffe Physical-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    M. E. Kompan, V. A. Klimov, S. E. Nikitin & E. I. Terukov

  2. Vakris Ltd., pr. Nauki 29, St. Petersburg, 195256, Russia

    F. M. Kompan

  3. Yuri Gagarin State Technical University of Saratov, ul. Politekhnicheskaya 77, Saratov, 410054, Russia

    V. G. Goffman

Authors
  1. M. E. Kompan
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  2. V. A. Klimov
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  3. S. E. Nikitin
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  4. F. M. Kompan
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  5. V. G. Goffman
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  6. E. I. Terukov
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Corresponding author

Correspondence to M. E. Kompan.

Additional information

Original Russian Text © M.E. Kompan, V.A. Klimov, S.E. Nikitin, F.M. Kompan, V.G. Goffman, E.I. Terukov, 2015, published in Fizika Tverdogo Tela, 2015, Vol. 57, No. 9, pp. 1859–1862.

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Kompan, M.E., Klimov, V.A., Nikitin, S.E. et al. Low-frequency impedance in thin films near the metal-semiconductor phase transition. Phys. Solid State 57, 1908–1911 (2015). https://doi.org/10.1134/S1063783415090188

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  • DOI: https://doi.org/10.1134/S1063783415090188

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