Physics of the Solid State

, Volume 57, Issue 8, pp 1529–1534 | Cite as

Thickness dependence of the properties of epitaxial barium strontium titanate thin films

  • V. B. ShirokovEmail author
  • Yu. I. Golovko
  • V. M. Mukhortov
  • Yu. I. Yuzyuk
  • P. E. Janolin
  • B. Dkhil


Heteroepitaxial Ba x Sr1 − x TiO3 thin films of different thicknesses have been studied in the paraelectric phase at a temperature of 600°C. The lattice parameters of the film have nonlinear dependence on the thickness. The misfit strain and unit cell volume increase with decreasing thickness. The behavior of the misfit strain with variations in the thickness is well described in the model of the double electric layer formed during the synthesis of the film at the interface with the substrate.


Double Electric Layer Film Plane Substrate Plane Barium Strontium Titanate Misfit Strain 
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  1. 1.
    B. Acikel, T. R. Taylor, P. J. Hausen, J. S. Speck, and R. A. York, IEEE Microwave Wireless Compon. Lett. 12, 237 (2002).CrossRefGoogle Scholar
  2. 2.
    P. K. Petrov, N. McN Algord, and S. Gevorgyan, Meas. Sci. Technol. 16, 583 (2005).ADSCrossRefGoogle Scholar
  3. 3.
    C. M. Carlson, T. V. Rivkin, P. A. Parilla, J. D. Perkins, D. S. Ginley, A. B. Kozyrev, V. N. Oshadchy, and A. S. Pavlov, Appl. Phys. Lett. 76, 1920 (2000).ADSCrossRefGoogle Scholar
  4. 4.
    C. M. Carlson, T. V. Rivkin, P. A. Parilla, J. D. Perkins, D. S. Ginley, A. B. Kozyrev, V. N. Oshadchy, A. S. Pavlov, A. Golovkov,M. Sugak, D. Kalinikos, L. C. Sengupta, L. Chiu, X. Zhang, Y. Zhu, and S. Sengupta, Mater. Res. Soc. Symp. Proc. 603, 15 (2000).CrossRefGoogle Scholar
  5. 5.
    W. J. Kim, W. Chang, S. B. Qadri, J. M. Pond, S.W. Kirchoefer, D. B. Chrisey, and J. S. Horwitz, Appl. Phys. Lett. 76, 1185 (2000).ADSCrossRefGoogle Scholar
  6. 6.
    B. H. Hoerman, B. M. Nichols, and B. W. Wessels, Phys. Rev. B: Condens. Matter 65, 224110 (2002).ADSCrossRefGoogle Scholar
  7. 7.
    S. K. Streiffer, C. Basceri, C. B. Parker, S. E. Lash, and A. I. Kingon, J. Appl. Phys. 86, 4565 (1999).ADSCrossRefGoogle Scholar
  8. 8.
    D. E. Kotecki, J. D. Baniecki, H. Shen, R. B. Laibowitz, K. L. Saenger, J. J. Lian, T. M. Shaw, S. D. Athavale, C. Cabral, P. R. Duncombe, M. Gutsche, G. Kunkel, Y.-J. Park, Y.-Y. Wang, and R. Wise, IBM J. Res. Dev. 43, 367 (1999).CrossRefGoogle Scholar
  9. 9.
    N. A. Pertsev, A. G. Zembilgotov, and A. K. Tagantsev, Phys. Rev. Lett. 80, 1988 (1998).ADSCrossRefGoogle Scholar
  10. 10.
    S. B. Desu, J. Electrochem. Soc. 140, 2981 (1993).CrossRefGoogle Scholar
  11. 11.
    V. M. Mukhortov, Y. I. Golovko, and G. N. Tolmachev, Ferroelectrics 247, 75 (2000).CrossRefGoogle Scholar
  12. 12.
    V. M. Mukhortov, Yu. I. Golovko, G. N. Tolmachev, and A. I. Mashchenko, Tech. Phys. 44(12), 1477 (1999).CrossRefGoogle Scholar
  13. 13.
    V. M. Mukhortov, Yu. I. Golovko, V. V. Kolesnikov, and V. A. Biryukov, Tech. Phys. Lett. 31(12), 1029 (2005).ADSCrossRefGoogle Scholar
  14. 14.
    D. K. Bowen and B. K. Tanner, High-Resolution X-Ray Diffractometry and Topography (Taylor and Francis, London, 1998).Google Scholar
  15. 15.
    E. J. Tarsa, E. A. Hachfeld, F. T. Quinlan, S. J. Speck, and M. Eddy, Appl. Phys. Lett. 68, 490 (1996).ADSCrossRefGoogle Scholar
  16. 16.
    V. B. Shirokov, Yu. I. Yuzyuk, B. Dkhil, and V. V. Lemanov, Phys. Rev. B: Condens. Matter 79, 144118 (2009).ADSCrossRefGoogle Scholar
  17. 17.
    Yu. I. Golovko, V. M. Mukhortov, Yu. I. Yuzyuk, P. E. Janolin, and B. Dkhil, Phys. Solid State 50(3), 485 (2008).ADSCrossRefGoogle Scholar
  18. 18.
    V. B. Shirokov, S. V. Biryukov, V. M. Mukhortov, and Yu. I. Yuzyuk, Tech. Phys. 56(8), 1175 (2011).CrossRefGoogle Scholar
  19. 19.
    V. B. Shirokov, V. I. Torgashev, A. A. Bakirov, and V. V. Lemanov, Phys. Rev. B: Condens. Matter 73, 104116 (2006).ADSCrossRefGoogle Scholar
  20. 20.
    V. B. Shirokov, Yu. I. Yuzyuk, V. V. Kalinchuk, and V. V. Lemanov, Phys. Solid State 55(4), 773 (2013).ADSCrossRefGoogle Scholar
  21. 21.
    J. S. Speck and W. Pompe, J. Appl. Phys. 76(1), 466 (1994).ADSCrossRefGoogle Scholar
  22. 22.
    S. P. Alpay and A. L. Roytburd, J. Appl. Phys. 83, 4714 (1998).ADSCrossRefGoogle Scholar
  23. 23.
    Z.-G. Ban and S. P. Alpay, J. Appl. Phys. 91, 9288 (2002).ADSCrossRefGoogle Scholar
  24. 24.
    L. S. Dubrovinsky and S. K. Saxena, Phys. Chem. Miner. 24, 547 (1997).ADSCrossRefGoogle Scholar
  25. 25.
    V. B. Shirokov, Opt. Spectrosc. 112(1), 135 (2012).ADSCrossRefGoogle Scholar
  26. 26.
    V. B. Shirokov, Yu. I. Golovko, and V. M. Mukhortov, Tech. Phys. 57(7), 975 (2012).CrossRefGoogle Scholar
  27. 27.
    S. Sze, Physics of Semiconductors Devices (Wiley, New York, 1981; Mir, Moscow, 1984).Google Scholar
  28. 28.
    G. Y. Yang, G. D. Lian, E. C. Dickey, C. A. Randall, D. E. Barber, P. Pinceloup, M. A. Henderson, R. A. Hill, J. J. Beeson, and D. J. Skamser, J. Appl. Phys. 96, 7500 (2004).ADSCrossRefGoogle Scholar
  29. 29.
    B. V. Deryagin, N. V. Churaev, and V. M. Muller, Surface Forces (Nauka, Moscow, 1985; Consultants Bureau, New York, 1987).Google Scholar

Copyright information

© Pleiades Publishing, Ltd. 2015

Authors and Affiliations

  • V. B. Shirokov
    • 1
    • 2
    Email author
  • Yu. I. Golovko
    • 1
  • V. M. Mukhortov
    • 1
    • 2
  • Yu. I. Yuzyuk
    • 2
  • P. E. Janolin
    • 3
  • B. Dkhil
    • 3
  1. 1.Southern Scientific CenterRussian Academy of SciencesRostov-on-DonRussia
  2. 2.Southern Federal UniversityRostov-on-DonRussia
  3. 3.LSPMSEcole Centrale ParisChatenay-Malabry CedexFrance

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