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Deposition of β-Ga2O3 layers by sublimation on sapphire substrates of different orientations

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Abstract

Layers of β-Ga2O3 have been grown by sublimation on sapphire substrates of different orientations. The main features of the crystal growth, morphology of layers, and their composition have been studied.

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Authors and Affiliations

  1. Ioffe Physical-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    V. N. Maslov, V. I. Nikolaev, V. M. Krymov & A. E. Romanov

  2. St. Petersburg State University of Information Technologies, Mechanics and Optics, Kronverkskii pr. 49, St. Petersburg, 197101, Russia

    V. N. Maslov, V. I. Nikolaev, V. M. Krymov, V. E. Bugrov & A. E. Romanov

  3. Company “Perfect Crystals LLC”, ul. Politekhnicheskaya 28 A, St. Petersburg, 194064, Russia

    V. I. Nikolaev

Authors
  1. V. N. Maslov
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  2. V. I. Nikolaev
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  3. V. M. Krymov
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  4. V. E. Bugrov
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  5. A. E. Romanov
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Corresponding author

Correspondence to V. N. Maslov.

Additional information

Original Russian Text © V.N. Maslov, V.I. Nikolaev, V.M. Krymov, V.E. Bugrov, A.E. Romanov, 2015, published in Fizika Tverdogo Tela, 2015, Vol. 57, No. 7, pp. 1315–1319.

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Maslov, V.N., Nikolaev, V.I., Krymov, V.M. et al. Deposition of β-Ga2O3 layers by sublimation on sapphire substrates of different orientations. Phys. Solid State 57, 1342–1346 (2015). https://doi.org/10.1134/S1063783415070215

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  • DOI: https://doi.org/10.1134/S1063783415070215

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